DE3279013D1 - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
DE3279013D1
DE3279013D1 DE8282301967T DE3279013T DE3279013D1 DE 3279013 D1 DE3279013 D1 DE 3279013D1 DE 8282301967 T DE8282301967 T DE 8282301967T DE 3279013 T DE3279013 T DE 3279013T DE 3279013 D1 DE3279013 D1 DE 3279013D1
Authority
DE
Germany
Prior art keywords
integrated circuit
semiconductor integrated
semiconductor
circuit
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282301967T
Other languages
German (de)
Inventor
Kiyoo Itoh
Ryoichi Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56057143A external-priority patent/JPS57172761A/en
Priority claimed from JP56168698A external-priority patent/JPS5870482A/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3279013D1 publication Critical patent/DE3279013D1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
DE8282301967T 1981-04-17 1982-04-16 Semiconductor integrated circuit Expired DE3279013D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56057143A JPS57172761A (en) 1981-04-17 1981-04-17 Semiconductor integrated circuit
JP56168698A JPS5870482A (en) 1981-10-23 1981-10-23 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
DE3279013D1 true DE3279013D1 (en) 1988-10-13

Family

ID=26398168

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282301967T Expired DE3279013D1 (en) 1981-04-17 1982-04-16 Semiconductor integrated circuit

Country Status (4)

Country Link
US (1) US4482985A (en)
EP (1) EP0063483B1 (en)
CA (1) CA1173519A (en)
DE (1) DE3279013D1 (en)

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JPS59111514A (en) * 1982-12-17 1984-06-27 Hitachi Ltd Semiconductor integrated circuit
USRE35313E (en) * 1981-04-17 1996-08-13 Hitachi, Ltd. Semiconductor integrated circuit with voltage limiter having different output ranges from normal operation and performing of aging tests
US5493572A (en) * 1981-04-17 1996-02-20 Hitachi, Ltd. Semiconductor integrated circuit with voltage limiter having different output ranges for normal operation and performing of aging tests
US5566185A (en) * 1982-04-14 1996-10-15 Hitachi, Ltd. Semiconductor integrated circuit
JPS59121691A (en) * 1982-12-01 1984-07-13 Fujitsu Ltd Dynamic type semiconductor storage device
US4585955B1 (en) * 1982-12-15 2000-11-21 Tokyo Shibaura Electric Co Internally regulated power voltage circuit for mis semiconductor integrated circuit
JPS59153331A (en) * 1983-02-21 1984-09-01 Toshiba Corp Semiconductor device
US4532467A (en) * 1983-03-14 1985-07-30 Vitafin N.V. CMOS Circuits with parameter adapted voltage regulator
JPH0772852B2 (en) * 1984-01-26 1995-08-02 株式会社東芝 Submicron semiconductor LSI on-chip power supply conversion circuit
JPS60176121A (en) * 1984-02-22 1985-09-10 Toshiba Corp Voltage drop circuit
US4951251A (en) * 1985-06-17 1990-08-21 Hitachi, Ltd. Semiconductor memory device
JPH07113863B2 (en) * 1985-06-29 1995-12-06 株式会社東芝 Semiconductor integrated circuit device
US4873673A (en) * 1986-12-03 1989-10-10 Hitachi, Ltd. Driver circuit having a current mirror circuit
US5086238A (en) * 1985-07-22 1992-02-04 Hitachi, Ltd. Semiconductor supply incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
JP2592234B2 (en) * 1985-08-16 1997-03-19 富士通株式会社 Semiconductor device
JPH0770216B2 (en) * 1985-11-22 1995-07-31 株式会社日立製作所 Semiconductor integrated circuit
JPS62250593A (en) * 1986-04-23 1987-10-31 Hitachi Ltd Dynamic ram
NL8702800A (en) * 1987-11-23 1989-06-16 Philips Nv INTEGRATED MEMORY CIRCUIT WITH INTERNAL POWER SUPPLY CONTROL.
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
US5297097A (en) * 1988-06-17 1994-03-22 Hitachi Ltd. Large scale integrated circuit for low voltage operation
JPH07109864B2 (en) * 1989-09-13 1995-11-22 シャープ株式会社 Static RAM
JP2809768B2 (en) * 1989-11-30 1998-10-15 株式会社東芝 Reference potential generation circuit
US5265056A (en) * 1989-12-28 1993-11-23 International Business Machines Corporation Signal margin testing system for dynamic RAM
JPH0834709B2 (en) * 1990-01-31 1996-03-29 株式会社日立製作所 Semiconductor integrated circuit and electric motor control device using the same
JP2888898B2 (en) * 1990-02-23 1999-05-10 株式会社日立製作所 Semiconductor integrated circuit
JPH03283562A (en) * 1990-03-30 1991-12-13 Sony Corp Semiconductor ic device
JP2557271B2 (en) * 1990-04-06 1996-11-27 三菱電機株式会社 Substrate voltage generation circuit in semiconductor device having internal step-down power supply voltage
US5063304A (en) * 1990-04-27 1991-11-05 Texas Instruments Incorporated Integrated circuit with improved on-chip power supply control
JPH04123388A (en) * 1990-09-13 1992-04-23 Nec Corp Semiconductor memory device
US5103425A (en) * 1991-03-11 1992-04-07 Motorola, Inc. Zener regulated programming circuit for a nonvolatile memory
JP2945508B2 (en) * 1991-06-20 1999-09-06 三菱電機株式会社 Semiconductor device
FR2680586B1 (en) * 1991-08-19 1994-03-11 Samsung Electronics Co Ltd ELECTRICALLY PROGRAMMABLE INTERNAL SUPPLY VOLTAGE GENERATOR CIRCUIT.
KR940008286B1 (en) * 1991-08-19 1994-09-09 삼성전자 주식회사 Internal voltage-source generating circuit
JP2744738B2 (en) * 1992-09-07 1998-04-28 三菱電機株式会社 Semiconductor storage device
US5280420A (en) * 1992-10-02 1994-01-18 National Semiconductor Corporation Charge pump which operates on a low voltage power supply
US5483152A (en) * 1993-01-12 1996-01-09 United Memories, Inc. Wide range power supply for integrated circuits
KR0152905B1 (en) * 1994-11-15 1998-12-01 문정환 Internal voltage generating circuit of semiconductor memory apparatus
US5847951A (en) * 1996-12-16 1998-12-08 Dell Usa, L.P. Method and apparatus for voltage regulation within an integrated circuit package
DE19716430A1 (en) * 1997-04-18 1998-11-19 Siemens Ag Circuit arrangement for generating an internal supply voltage
US6150878A (en) * 1998-01-12 2000-11-21 Chip Express (Israel) Ltd. Low voltage device operable with a high voltage supply
JP3621844B2 (en) * 1999-02-24 2005-02-16 シャープ株式会社 Amplification type solid-state imaging device
JP4614481B2 (en) 1999-08-30 2011-01-19 ルネサスエレクトロニクス株式会社 Semiconductor integrated circuit device
US6351420B1 (en) * 2000-02-07 2002-02-26 Advanced Micro Devices, Inc. Voltage boost level clamping circuit for a flash memory
AU2001282935A1 (en) 2000-08-01 2002-02-13 First Usa Bank, N.A. System and method for transponder-enabled account transactions
US6329800B1 (en) 2000-10-17 2001-12-11 Sigmatel Method and apparatus for reducing power consumption in driver circuits
US7526449B1 (en) 2001-04-17 2009-04-28 Jpmorgan Chase Bank N.A. Optically encoded card and system and method for using
US20030019942A1 (en) * 2001-07-24 2003-01-30 Blossom George W. System and method for electronically readable card having power source
US7099850B1 (en) 2001-09-21 2006-08-29 Jpmorgan Chase Bank, N.A. Methods for providing cardless payment
WO2003077080A2 (en) 2002-03-08 2003-09-18 Jp Morgan Chase Bank Financial system for isolated economic environment
US8392301B1 (en) 2002-03-08 2013-03-05 Jpmorgan Chase Bank, N.A. Financial system for isolated economic environment
US20040210498A1 (en) * 2002-03-29 2004-10-21 Bank One, National Association Method and system for performing purchase and other transactions using tokens with multiple chips
TW200532701A (en) * 2003-12-18 2005-10-01 Rohm Co Ltd Semiconductor device
US7292088B2 (en) * 2004-05-19 2007-11-06 International Rectifier Corporation Gate driver output stage with bias circuit for high and wide operating voltage range
JP4717692B2 (en) * 2006-04-14 2011-07-06 ルネサスエレクトロニクス株式会社 Limiter circuit
USD636021S1 (en) 2008-07-17 2011-04-12 Jpmorgan Chase Bank, N.A. Eco-friendly transaction device
US9583479B1 (en) * 2016-01-14 2017-02-28 Globalfoundries Inc. Semiconductor charge pump with imbedded capacitor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855724A1 (en) * 1978-12-22 1980-07-03 Ibm Deutschland METHOD AND DEVICE FOR ADJUSTING THE DIFFERENT SIGNAL DELAY TIMES OF SEMICONDUCTOR CHIPS
JPS5619676A (en) * 1979-07-26 1981-02-24 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
EP0063483A3 (en) 1984-07-25
CA1173519A (en) 1984-08-28
EP0063483B1 (en) 1988-09-07
EP0063483A2 (en) 1982-10-27
US4482985A (en) 1984-11-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. GROENING, H., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN