JPS57172761A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS57172761A
JPS57172761A JP56057143A JP5714381A JPS57172761A JP S57172761 A JPS57172761 A JP S57172761A JP 56057143 A JP56057143 A JP 56057143A JP 5714381 A JP5714381 A JP 5714381A JP S57172761 A JPS57172761 A JP S57172761A
Authority
JP
Japan
Prior art keywords
circuit
size
drain
oxide film
mos element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56057143A
Other languages
Japanese (ja)
Other versions
JPH0248998B2 (en
Inventor
Kiyoo Ito
Ryoichi Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56057143A priority Critical patent/JPS57172761A/en
Priority to US06/368,162 priority patent/US4482985A/en
Priority to DE8282301967T priority patent/DE3279013D1/en
Priority to EP82301967A priority patent/EP0063483B1/en
Priority to CA000401238A priority patent/CA1173519A/en
Publication of JPS57172761A publication Critical patent/JPS57172761A/en
Publication of JPH0248998B2 publication Critical patent/JPH0248998B2/ja
Priority to US07/869,851 priority patent/US5493572A/en
Priority to US07/875,088 priority patent/USRE35313E/en
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To obtain a high density semiconductor memory as a whole, by increasing the size of the element in a circuit responding to a signal whose amplitude is large so as to increase the withstanding voltage and to decrease the size of the element in a circuit responding to the output signal of the former circuit. CONSTITUTION:On a P type semiconductor substrate 10, the first circuit 40 comprising a peripheral circuit directly connected to a memory array and the second circuit 50 comprising an indirect peripheral circuit which controls the first circuit are formed. Since the area of said second circuit 50 is only about 10% of the entire area of the chip, an MOS element which has an especially small size is not used. Instead the MOS element of the first element 40 which occupies the large area is reduced. That is, the thickness of a gate oxide film tox1 of the N type MOS element Qm constituting the circuit 40 is made thinner than the thickness of a gate oxide film tox2 of the N type MOS element Qp forming the circuit 50. A high voltage VCC is applied to a drain Dp of the element Qp from a substrate voltage generating circuit 20 and a low voltage VDP is applied to a drain Dm of the element Qm from an internal power source voltage generating circuit 30.
JP56057143A 1981-04-17 1981-04-17 Semiconductor integrated circuit Granted JPS57172761A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP56057143A JPS57172761A (en) 1981-04-17 1981-04-17 Semiconductor integrated circuit
US06/368,162 US4482985A (en) 1981-04-17 1982-04-14 Semiconductor integrated circuit
DE8282301967T DE3279013D1 (en) 1981-04-17 1982-04-16 Semiconductor integrated circuit
EP82301967A EP0063483B1 (en) 1981-04-17 1982-04-16 Semiconductor integrated circuit
CA000401238A CA1173519A (en) 1981-04-17 1982-04-19 Semiconductor integrated circuit
US07/869,851 US5493572A (en) 1981-04-17 1992-04-16 Semiconductor integrated circuit with voltage limiter having different output ranges for normal operation and performing of aging tests
US07/875,088 USRE35313E (en) 1981-04-17 1992-04-28 Semiconductor integrated circuit with voltage limiter having different output ranges from normal operation and performing of aging tests

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56057143A JPS57172761A (en) 1981-04-17 1981-04-17 Semiconductor integrated circuit

Related Child Applications (6)

Application Number Title Priority Date Filing Date
JP2041007A Division JPH02236895A (en) 1990-02-23 1990-02-23 semiconductor integrated circuit
JP2041008A Division JPH0713875B2 (en) 1990-02-23 1990-02-23 Semiconductor integrated circuit
JP3241344A Division JPH056665A (en) 1991-09-20 1991-09-20 Large scale integrated circuit
JP3241342A Division JPH052881A (en) 1991-09-20 1991-09-20 Large scale integrated circuit
JP3241341A Division JPH0793004B2 (en) 1991-09-20 1991-09-20 Large scale integrated circuit
JP3241343A Division JPH0793005B2 (en) 1991-09-20 1991-09-20 Large scale integrated circuit

Publications (2)

Publication Number Publication Date
JPS57172761A true JPS57172761A (en) 1982-10-23
JPH0248998B2 JPH0248998B2 (en) 1990-10-26

Family

ID=13047345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56057143A Granted JPS57172761A (en) 1981-04-17 1981-04-17 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57172761A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111514A (en) * 1982-12-17 1984-06-27 Hitachi Ltd Semiconductor integrated circuit
JPS59218699A (en) * 1983-05-26 1984-12-08 Toshiba Corp Peripheral circuit of nonvolatile semiconductor memory
JPS59231917A (en) * 1983-06-15 1984-12-26 Hitachi Ltd Semiconductor device
JPS60170095A (en) * 1984-02-15 1985-09-03 Hitachi Ltd Semicondutor device
JPS62119960A (en) * 1985-11-20 1987-06-01 Fujitsu Ltd Complementary semiconductor integrated circuit device
JPS6394499A (en) * 1986-10-07 1988-04-25 Toshiba Corp Semiconductor memory device
JPH01162295A (en) * 1987-11-23 1989-06-26 Philips Gloeilampenfab:Nv Integrated memory circuit
US4930112A (en) * 1985-11-22 1990-05-29 Hitachi, Ltd. Semiconductor device having a voltage limiter
JPH04256425A (en) * 1991-02-05 1992-09-11 Nippon Millipore Kogyo Kk Backwash device for filtration
JPH06104392A (en) * 1993-04-16 1994-04-15 Hitachi Ltd Semiconductor integrated circuit
JPH06131876A (en) * 1992-10-21 1994-05-13 Toshiba Corp Semiconductor storage device
USRE37593E1 (en) 1988-06-17 2002-03-19 Hitachi, Ltd. Large scale integrated circuit with sense amplifier circuits for low voltage operation
US6614266B2 (en) 2001-07-16 2003-09-02 Fujitsu Limited Semiconductor integrated circuit
JP2005267837A (en) * 2004-02-20 2005-09-29 Renesas Technology Corp Semiconductor device
JP2008004259A (en) * 2007-07-31 2008-01-10 Hitachi Ltd Semiconductor integrated circuit
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5458386A (en) * 1977-10-19 1979-05-11 Hitachi Ltd Mos semiconductor device
JPS5674888A (en) * 1979-11-19 1981-06-20 Seiko Epson Corp Random access memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5458386A (en) * 1977-10-19 1979-05-11 Hitachi Ltd Mos semiconductor device
JPS5674888A (en) * 1979-11-19 1981-06-20 Seiko Epson Corp Random access memory

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111514A (en) * 1982-12-17 1984-06-27 Hitachi Ltd Semiconductor integrated circuit
JPS59218699A (en) * 1983-05-26 1984-12-08 Toshiba Corp Peripheral circuit of nonvolatile semiconductor memory
JPS59231917A (en) * 1983-06-15 1984-12-26 Hitachi Ltd Semiconductor device
JPS60170095A (en) * 1984-02-15 1985-09-03 Hitachi Ltd Semicondutor device
JPS62119960A (en) * 1985-11-20 1987-06-01 Fujitsu Ltd Complementary semiconductor integrated circuit device
US4930112A (en) * 1985-11-22 1990-05-29 Hitachi, Ltd. Semiconductor device having a voltage limiter
JPS6394499A (en) * 1986-10-07 1988-04-25 Toshiba Corp Semiconductor memory device
JPH01162295A (en) * 1987-11-23 1989-06-26 Philips Gloeilampenfab:Nv Integrated memory circuit
USRE37593E1 (en) 1988-06-17 2002-03-19 Hitachi, Ltd. Large scale integrated circuit with sense amplifier circuits for low voltage operation
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
JPH04256425A (en) * 1991-02-05 1992-09-11 Nippon Millipore Kogyo Kk Backwash device for filtration
JPH06131876A (en) * 1992-10-21 1994-05-13 Toshiba Corp Semiconductor storage device
JPH06104392A (en) * 1993-04-16 1994-04-15 Hitachi Ltd Semiconductor integrated circuit
US6614266B2 (en) 2001-07-16 2003-09-02 Fujitsu Limited Semiconductor integrated circuit
JP2005267837A (en) * 2004-02-20 2005-09-29 Renesas Technology Corp Semiconductor device
JP2008004259A (en) * 2007-07-31 2008-01-10 Hitachi Ltd Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPH0248998B2 (en) 1990-10-26

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