JPS5784160A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5784160A
JPS5784160A JP55160221A JP16022180A JPS5784160A JP S5784160 A JPS5784160 A JP S5784160A JP 55160221 A JP55160221 A JP 55160221A JP 16022180 A JP16022180 A JP 16022180A JP S5784160 A JPS5784160 A JP S5784160A
Authority
JP
Japan
Prior art keywords
region
epitaxial layer
series resistance
type
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55160221A
Other languages
Japanese (ja)
Inventor
Atsuhiko Menju
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55160221A priority Critical patent/JPS5784160A/en
Publication of JPS5784160A publication Critical patent/JPS5784160A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Abstract

PURPOSE:To obtain good reproducibility of characteristics needed for each element and improve degree of integration in a semiconductor device having a high withstand voltage element and an element of a low series resistance in a mixed state in the same semiconductor substrate. CONSTITUTION:After an n<-> type epitaxial layer 21 are formed on a p<-> type Si substrate 1 which is provided with an n<+> type buried layer 2, an element isolation area 3 and a collector connecting region 22 are built, and a boose region 4, an emitter area 5 and an insulation film 6 are formed. Subsequently an openings 71, 72 are bored selectively on an insulation film 6 where there is need for lowering a series resistance such as a region of a Schottky barrier diode and a region in correspondence with a transistor containing a Schottky barrier diode, and etching by necessary quantity on the epitaxial layer 21 is performed. By this constitution, through etching of the silicon epitaxial layer 21 in a region containing an element of low series resistance element, it is placed shallower than the epitaxial layer 21 containing a high withstand voltage element.
JP55160221A 1980-11-14 1980-11-14 Semiconductor device Pending JPS5784160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55160221A JPS5784160A (en) 1980-11-14 1980-11-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55160221A JPS5784160A (en) 1980-11-14 1980-11-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5784160A true JPS5784160A (en) 1982-05-26

Family

ID=15710334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55160221A Pending JPS5784160A (en) 1980-11-14 1980-11-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5784160A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10528900B2 (en) 2016-01-28 2020-01-07 Walmart Apollo, Llc Cargo unloading apparatus and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10528900B2 (en) 2016-01-28 2020-01-07 Walmart Apollo, Llc Cargo unloading apparatus and method

Similar Documents

Publication Publication Date Title
JPS5784160A (en) Semiconductor device
JPS577157A (en) Semiconductor device
JPS56108255A (en) Semiconductor integrated circuit
JPS645064A (en) Semiconductor integrated circuit device
JPS55105367A (en) Semiconductor device
JPS56142661A (en) Semiconductor integrated circuit and manufacture thereof
JPS5648167A (en) Semiconductor device
JPS56135965A (en) Semiconductor device
JPS57143855A (en) Semiconductor integrated circuit device
JPS55102263A (en) Semiconductor integrated circuit
JPS5734356A (en) Semiconductor device
JPS572568A (en) Semiconductor device
JPS55103773A (en) Semiconductor device
JPS55108761A (en) Semiconductor integrated circuit device
JPS57198657A (en) Semiconductor device
JPS567449A (en) Semiconductor device
JPS5529175A (en) Planar type transistor
JPS6453572A (en) Semiconductor integrated circuit device with bipolar element
JPS5710968A (en) Semiconductor device
JPS57126162A (en) Semiconductor device
JPS6428926A (en) Semiconductor device
JPS56115546A (en) Semiconductor device
JPS55115361A (en) Semiconductor device
JPS5685847A (en) Semiconductor device and manufacture thereof
JPS5673460A (en) Semiconductor integrated circuit