JPS55115361A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55115361A
JPS55115361A JP2270279A JP2270279A JPS55115361A JP S55115361 A JPS55115361 A JP S55115361A JP 2270279 A JP2270279 A JP 2270279A JP 2270279 A JP2270279 A JP 2270279A JP S55115361 A JPS55115361 A JP S55115361A
Authority
JP
Japan
Prior art keywords
layer
resistance
collector
transistor
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2270279A
Other languages
Japanese (ja)
Inventor
Kenji Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2270279A priority Critical patent/JPS55115361A/en
Publication of JPS55115361A publication Critical patent/JPS55115361A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To raise integration density and performance, by using the saturation resistance of a transistor necessary for constituting a logical function, as a load resistance for the transistor itself.
CONSTITUTION: An epitaxial N-layer 4 is provided on a p-type Si substrate 3. To reduce a collector saturation resistance, an embedded n+-layer may be provided. The epitaxial N-layer 4 is insulated by an SiO2 layer 5 to provide a P-type base 6, an N-type emitter 7 and collectors 8, 9. As a result, a high resistance is easily provided in a collector layer 10 right under the base layer 6, no embedded layer of low resisrance is needed in the region of a transistor whose collector is connected to a load resistor, the distance between transistors is greatly reduced and a parasitic capacitance due to a resistance is eliminated. Therefore, a device of high integration degree and performance is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP2270279A 1979-02-28 1979-02-28 Semiconductor device Pending JPS55115361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2270279A JPS55115361A (en) 1979-02-28 1979-02-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2270279A JPS55115361A (en) 1979-02-28 1979-02-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55115361A true JPS55115361A (en) 1980-09-05

Family

ID=12090185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2270279A Pending JPS55115361A (en) 1979-02-28 1979-02-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55115361A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812350A (en) * 1981-07-16 1983-01-24 Nec Corp Semiconductor integrated circuit device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185684A (en) * 1975-01-27 1976-07-27 Nippon Telegraph & Telephone SHUSEKIKAFUKU GOSOSHI
JPS526458A (en) * 1975-07-07 1977-01-18 Nippon Telegr & Teleph Corp <Ntt> Integrated semi-conductor logicalcircuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185684A (en) * 1975-01-27 1976-07-27 Nippon Telegraph & Telephone SHUSEKIKAFUKU GOSOSHI
JPS526458A (en) * 1975-07-07 1977-01-18 Nippon Telegr & Teleph Corp <Ntt> Integrated semi-conductor logicalcircuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812350A (en) * 1981-07-16 1983-01-24 Nec Corp Semiconductor integrated circuit device

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