JPS645064A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS645064A JPS645064A JP62160619A JP16061987A JPS645064A JP S645064 A JPS645064 A JP S645064A JP 62160619 A JP62160619 A JP 62160619A JP 16061987 A JP16061987 A JP 16061987A JP S645064 A JPS645064 A JP S645064A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- sbd
- polycrystalline silicon
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To increase a series resistance value without increasing the size of a memory cell by a method wherein a polycrystalline silicon resistor is formed in a trench provided between the Schottky barrier diode region and the transistor region of a bipolar ECL-RAM. CONSTITUTION:Two n<+>type buried layers 2 and 2A which are separated from each other by an n<-->type epitaxial layer 3 formed on a p-type semiconductor substrate 1 are formed between the layer 3 and the substrate 1. A Schottky barrier diode (SBD) is formed on the surface of an n<->type epitaxial layer 10 above the layer 2A. A trench reaching the layer 2 is formed in the layer 3 on the layer 2 and on the SBD side and filled with an n<->type polycrystalline silicon layer 6. As the specific resistivity of the layer 3 is large, a current is applied to the SBD through the layer 6 and an n<+>type diffused layer 9 on the surface of the layer 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62160619A JPS645064A (en) | 1987-06-26 | 1987-06-26 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62160619A JPS645064A (en) | 1987-06-26 | 1987-06-26 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS645064A true JPS645064A (en) | 1989-01-10 |
Family
ID=15718849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62160619A Pending JPS645064A (en) | 1987-06-26 | 1987-06-26 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS645064A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012028474A (en) * | 2010-07-21 | 2012-02-09 | Panasonic Corp | Semiconductor device and manufacturing method thereof |
-
1987
- 1987-06-26 JP JP62160619A patent/JPS645064A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012028474A (en) * | 2010-07-21 | 2012-02-09 | Panasonic Corp | Semiconductor device and manufacturing method thereof |
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