JPS567449A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS567449A
JPS567449A JP8307679A JP8307679A JPS567449A JP S567449 A JPS567449 A JP S567449A JP 8307679 A JP8307679 A JP 8307679A JP 8307679 A JP8307679 A JP 8307679A JP S567449 A JPS567449 A JP S567449A
Authority
JP
Japan
Prior art keywords
layer
high concentration
substrate
wiring
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8307679A
Other languages
Japanese (ja)
Other versions
JPS6225260B2 (en
Inventor
Tadashi Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8307679A priority Critical patent/JPS567449A/en
Publication of JPS567449A publication Critical patent/JPS567449A/en
Publication of JPS6225260B2 publication Critical patent/JPS6225260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To integrate a device to a high degree by means of supplying line voltage through a semiconductor thin layer with high concentration by a method wherein a MOSFET is formed into a gas phase epitaxial layer made up on a one-conduction type semiconductor substrate through the high concentration layer. CONSTITUTION:An Sb diffusion layer 2 with high concentration in approximate 10<2>-10<6> times of an n-type Si substrate 1 and a p diffusion layer 3 are formed on the substrate 1. An n epitaxial layer 4 is stacked, and an n<+>-layer 5 is made up and connected to the n-layer 3. A p-type source 6 and a drain 7 are formed, an n<+> connecting layer 9 is built up, and Al electrodes 8, 10-12 are formed. According to this constitution, a device can be integrated without needing the wiring of Al wiring for a power source on a chip, and the voltage drop of the power source due to a resistance component of the buried layer 2 is extremely little.
JP8307679A 1979-06-29 1979-06-29 Semiconductor device Granted JPS567449A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8307679A JPS567449A (en) 1979-06-29 1979-06-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8307679A JPS567449A (en) 1979-06-29 1979-06-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS567449A true JPS567449A (en) 1981-01-26
JPS6225260B2 JPS6225260B2 (en) 1987-06-02

Family

ID=13792078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8307679A Granted JPS567449A (en) 1979-06-29 1979-06-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS567449A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62181474U (en) * 1986-05-12 1987-11-18

Also Published As

Publication number Publication date
JPS6225260B2 (en) 1987-06-02

Similar Documents

Publication Publication Date Title
GB988902A (en) Semiconductor devices and methods of making same
JPS55134962A (en) Semiconductor device
JPS5483386A (en) Semiconductor device
JPS645070A (en) Vertical insulated gate field effect transistor
JPS55102268A (en) Protecting circuit for semiconductor device
JPS567449A (en) Semiconductor device
JPS56108255A (en) Semiconductor integrated circuit
JPS56164568A (en) Semiconductor device
JPS645064A (en) Semiconductor integrated circuit device
JPS55102263A (en) Semiconductor integrated circuit
JPS5577167A (en) Semiconductor device
JPS5784160A (en) Semiconductor device
JPS5674940A (en) Integrated semiconductor device
JPS57113276A (en) Semiconductor memory device
JPS5538080A (en) Semiconductor device
JPS5469391A (en) Integrated composite element
JPS5734357A (en) Semiconductor integrated circuit
JPS6428926A (en) Semiconductor device
KR900000816B1 (en) I2l device manufacturing method
JPS5734356A (en) Semiconductor device
JPS5780769A (en) Semiconductor device
JPS5623751A (en) Manufacture of integrated circuit device
JPS54142080A (en) Semiconductor device
JPS57126162A (en) Semiconductor device
JPS57118665A (en) Semiconductor integrated circuit device