JPS5483386A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5483386A
JPS5483386A JP15126777A JP15126777A JPS5483386A JP S5483386 A JPS5483386 A JP S5483386A JP 15126777 A JP15126777 A JP 15126777A JP 15126777 A JP15126777 A JP 15126777A JP S5483386 A JPS5483386 A JP S5483386A
Authority
JP
Japan
Prior art keywords
film
solar battery
type
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15126777A
Other languages
Japanese (ja)
Inventor
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15126777A priority Critical patent/JPS5483386A/en
Publication of JPS5483386A publication Critical patent/JPS5483386A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: To provide a solar battery on the semiconductor substrate, while separating the former from the latter with insulator film, for forming an integrated circuit and to use the energy from the solar battery obtained by light irradiation for the drive source of the integrated circuit, thereby obtaining a self-operating semiconductor device without increasing its chip area.
CONSTITUTION: The N+-type source region 32 and N+-type drain region 33 of the N-channel MOS transistor are formed by diffusion on the P-type Si substrate 31; and between these two regions, a gate electrode 34 is provided through insulator film. Next, region 32 is connected to the top surface of substrate 31 by means of external wiring, and then the entire portion is covered with insulator film 35. Later, N-type multiple crystal Si film 36 is made by gas phase growth on film 35, and P- type layer 37 is formed by diffusion on the top-surface layer of Si film 36 to cause a PN junction, thereby forming a solar battery. In this constitution, layer 37 is connected to drain region 33 of the transistor, and film 36 is connected to its source region 32. Further, if necessary, secondary battery 38 for charging and discharging the solar battery may be connected to both ends of the solar battery.
COPYRIGHT: (C)1979,JPO&Japio
JP15126777A 1977-12-15 1977-12-15 Semiconductor device Pending JPS5483386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15126777A JPS5483386A (en) 1977-12-15 1977-12-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15126777A JPS5483386A (en) 1977-12-15 1977-12-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5483386A true JPS5483386A (en) 1979-07-03

Family

ID=15514919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15126777A Pending JPS5483386A (en) 1977-12-15 1977-12-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5483386A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633874A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Semiconductor device builtin with photocell
JPS5760231U (en) * 1980-09-27 1982-04-09
JPS5772369A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Semiconductor device building in light receiving element
JPS5790981A (en) * 1980-11-27 1982-06-05 Mitsubishi Electric Corp Semiconductor device
JPS5890786A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Semiconductor device
JPS5895874A (en) * 1981-11-30 1983-06-07 Mitsubishi Electric Corp Semiconductor device
JPS58140154A (en) * 1982-02-15 1983-08-19 Seiko Epson Corp Semiconductor integrated circuit device
JPS5922360A (en) * 1982-07-28 1984-02-04 Matsushita Electric Works Ltd Optical input mos type transistor
JPS5978569A (en) * 1982-10-27 1984-05-07 Seiko Epson Corp Semiconductor device
JPS59213161A (en) * 1983-05-19 1984-12-03 Matsushita Electric Ind Co Ltd Semiconductor device
JPH02194558A (en) * 1989-01-21 1990-08-01 Nippondenso Co Ltd Semiconductor device and manufacture thereof
CN103000739A (en) * 2011-09-16 2013-03-27 深圳光启高等理工研究院 Electronic device and circuit power unit therefor
TWI476942B (en) * 2011-05-31 2015-03-11 Motech Suzhou Renewable Energy Co Ltd Texturing method for mono-like silicon chip

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633874A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Semiconductor device builtin with photocell
JPS5760231U (en) * 1980-09-27 1982-04-09
JPS5772369A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Semiconductor device building in light receiving element
JPS5790981A (en) * 1980-11-27 1982-06-05 Mitsubishi Electric Corp Semiconductor device
JPH0227825B2 (en) * 1981-11-25 1990-06-20 Mitsubishi Electric Corp
JPS5890786A (en) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp Semiconductor device
JPS5895874A (en) * 1981-11-30 1983-06-07 Mitsubishi Electric Corp Semiconductor device
JPS58140154A (en) * 1982-02-15 1983-08-19 Seiko Epson Corp Semiconductor integrated circuit device
JPS5922360A (en) * 1982-07-28 1984-02-04 Matsushita Electric Works Ltd Optical input mos type transistor
JPS5978569A (en) * 1982-10-27 1984-05-07 Seiko Epson Corp Semiconductor device
JPH0475666B2 (en) * 1982-10-27 1992-12-01 Seiko Epson Corp
JPS59213161A (en) * 1983-05-19 1984-12-03 Matsushita Electric Ind Co Ltd Semiconductor device
JPH02194558A (en) * 1989-01-21 1990-08-01 Nippondenso Co Ltd Semiconductor device and manufacture thereof
TWI476942B (en) * 2011-05-31 2015-03-11 Motech Suzhou Renewable Energy Co Ltd Texturing method for mono-like silicon chip
CN103000739A (en) * 2011-09-16 2013-03-27 深圳光启高等理工研究院 Electronic device and circuit power unit therefor
CN103000739B (en) * 2011-09-16 2016-01-06 深圳光启高等理工研究院 The supply unit of a kind of electronic equipment and circuit thereof

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