JPS5563860A - Junction-type field-effect device - Google Patents

Junction-type field-effect device

Info

Publication number
JPS5563860A
JPS5563860A JP13748078A JP13748078A JPS5563860A JP S5563860 A JPS5563860 A JP S5563860A JP 13748078 A JP13748078 A JP 13748078A JP 13748078 A JP13748078 A JP 13748078A JP S5563860 A JPS5563860 A JP S5563860A
Authority
JP
Japan
Prior art keywords
bit lines
layers
junction
silicon oxide
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13748078A
Other languages
Japanese (ja)
Other versions
JPS6337506B2 (en
Inventor
Kuniyuki Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13748078A priority Critical patent/JPS5563860A/en
Publication of JPS5563860A publication Critical patent/JPS5563860A/en
Publication of JPS6337506B2 publication Critical patent/JPS6337506B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components

Abstract

PURPOSE:To insulate the bit lines of a junction-type field-effect memory from each other, by using a polycrystalline semiconductor layer to electrically disconnect buried diffused layers which act as the bit lines. CONSTITUTION:Buried N<+> impurity diffused layers 102, which act as bit lines, are provided in the surface portion of a P<-> silicon substrate 101. A silicon oxide film 103 is provided in the surface portion except in the positions of the diffused layers. N<-> semiconductor layers are then grown to provide single-crystal layers 104 and a polycrstalline layer 105. P<+> gate regions 106 are then provided in contact with the single-crystal layers 104. Polycrystalline silicon wirings 108 are produced by diffusing an impurity through silicon oxide films. An aluminium wiring 110 is provided on silicon oxide films on the polycrystalline silicon wirings so that the aluminium wiring 110 is connected to the gares 106. As a result, the bit lines 102 are isolated from the substrate 101 by the inverse biasing of a pn junction and prevented by the polycrystalline semiconductor layer from being connected to each other through the grown semiconductor layers. The bit lines are thus insulated from each other.
JP13748078A 1978-11-08 1978-11-08 Junction-type field-effect device Granted JPS5563860A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13748078A JPS5563860A (en) 1978-11-08 1978-11-08 Junction-type field-effect device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13748078A JPS5563860A (en) 1978-11-08 1978-11-08 Junction-type field-effect device

Publications (2)

Publication Number Publication Date
JPS5563860A true JPS5563860A (en) 1980-05-14
JPS6337506B2 JPS6337506B2 (en) 1988-07-26

Family

ID=15199604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13748078A Granted JPS5563860A (en) 1978-11-08 1978-11-08 Junction-type field-effect device

Country Status (1)

Country Link
JP (1) JPS5563860A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0663334U (en) * 1991-01-16 1994-09-06 株式会社タムラ製作所 Thermal head support device for line printer
JPH0738066A (en) * 1991-04-17 1995-02-07 Korea Electron Telecommun Junction field dynamic ram and preparation thereof
JP2008037432A (en) * 2006-08-01 2008-02-21 Guruppo Pieta Co Ltd Spout device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0663334U (en) * 1991-01-16 1994-09-06 株式会社タムラ製作所 Thermal head support device for line printer
JPH0738066A (en) * 1991-04-17 1995-02-07 Korea Electron Telecommun Junction field dynamic ram and preparation thereof
JP2008037432A (en) * 2006-08-01 2008-02-21 Guruppo Pieta Co Ltd Spout device

Also Published As

Publication number Publication date
JPS6337506B2 (en) 1988-07-26

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