JPS551141A - Insulated gate field-effect type transistor - Google Patents
Insulated gate field-effect type transistorInfo
- Publication number
- JPS551141A JPS551141A JP7439278A JP7439278A JPS551141A JP S551141 A JPS551141 A JP S551141A JP 7439278 A JP7439278 A JP 7439278A JP 7439278 A JP7439278 A JP 7439278A JP S551141 A JPS551141 A JP S551141A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- sio
- substrate
- whole surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: For decreasing P-N junction interface and obtaining a high operational speed, to make only the channel range directly under a gate electrode, of monocrystalline layer, to provide field insulating film in contact with the two mutually facing edges of the lower section of channel range, and to form polycrystalline layer in contact with a source drain on said film.
CONSTITUTION: Two N+-type ranges 2 are diffusedly formed on a P-type Si substrate 1, and made porous to change into SiO2 film 3. Next, Si layer is formed over the whole surface of said substrate 1, and polycrystalline Si layer 4 and monocrystalline layer 5 on said film 3. Thereafter, gate SiO2 film 6 and thick SiO2 film 7 are formed on said layers 5 and 4 respectively, and poycristallins Si layer 8 over the whole surface of said substrate 1. Next, said layer 8 is removed except that on said film 6, an N+-type source range 9 and a drain range 10 are diffusedly formed on the both side faces of said layer 5, and at the same time the polycrystalline layer 4 on said both side faces are changed into low resistance layer 9' and 10'. Thereafter, the whole surface of said substrtate 1 is covered with SiO2 film 11, and openings and electrodes are provided thereon.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7439278A JPS551141A (en) | 1978-06-19 | 1978-06-19 | Insulated gate field-effect type transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7439278A JPS551141A (en) | 1978-06-19 | 1978-06-19 | Insulated gate field-effect type transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS551141A true JPS551141A (en) | 1980-01-07 |
Family
ID=13545855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7439278A Pending JPS551141A (en) | 1978-06-19 | 1978-06-19 | Insulated gate field-effect type transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS551141A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4887143A (en) * | 1988-03-28 | 1989-12-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US4959329A (en) * | 1988-03-28 | 1990-09-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
-
1978
- 1978-06-19 JP JP7439278A patent/JPS551141A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4887143A (en) * | 1988-03-28 | 1989-12-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US4959329A (en) * | 1988-03-28 | 1990-09-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
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