JPS551141A - Insulated gate field-effect type transistor - Google Patents

Insulated gate field-effect type transistor

Info

Publication number
JPS551141A
JPS551141A JP7439278A JP7439278A JPS551141A JP S551141 A JPS551141 A JP S551141A JP 7439278 A JP7439278 A JP 7439278A JP 7439278 A JP7439278 A JP 7439278A JP S551141 A JPS551141 A JP S551141A
Authority
JP
Japan
Prior art keywords
layer
film
sio
substrate
whole surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7439278A
Other languages
Japanese (ja)
Inventor
Seishi Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7439278A priority Critical patent/JPS551141A/en
Publication of JPS551141A publication Critical patent/JPS551141A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: For decreasing P-N junction interface and obtaining a high operational speed, to make only the channel range directly under a gate electrode, of monocrystalline layer, to provide field insulating film in contact with the two mutually facing edges of the lower section of channel range, and to form polycrystalline layer in contact with a source drain on said film.
CONSTITUTION: Two N+-type ranges 2 are diffusedly formed on a P-type Si substrate 1, and made porous to change into SiO2 film 3. Next, Si layer is formed over the whole surface of said substrate 1, and polycrystalline Si layer 4 and monocrystalline layer 5 on said film 3. Thereafter, gate SiO2 film 6 and thick SiO2 film 7 are formed on said layers 5 and 4 respectively, and poycristallins Si layer 8 over the whole surface of said substrate 1. Next, said layer 8 is removed except that on said film 6, an N+-type source range 9 and a drain range 10 are diffusedly formed on the both side faces of said layer 5, and at the same time the polycrystalline layer 4 on said both side faces are changed into low resistance layer 9' and 10'. Thereafter, the whole surface of said substrtate 1 is covered with SiO2 film 11, and openings and electrodes are provided thereon.
COPYRIGHT: (C)1980,JPO&Japio
JP7439278A 1978-06-19 1978-06-19 Insulated gate field-effect type transistor Pending JPS551141A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7439278A JPS551141A (en) 1978-06-19 1978-06-19 Insulated gate field-effect type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7439278A JPS551141A (en) 1978-06-19 1978-06-19 Insulated gate field-effect type transistor

Publications (1)

Publication Number Publication Date
JPS551141A true JPS551141A (en) 1980-01-07

Family

ID=13545855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7439278A Pending JPS551141A (en) 1978-06-19 1978-06-19 Insulated gate field-effect type transistor

Country Status (1)

Country Link
JP (1) JPS551141A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4887143A (en) * 1988-03-28 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US4959329A (en) * 1988-03-28 1990-09-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4887143A (en) * 1988-03-28 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US4959329A (en) * 1988-03-28 1990-09-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

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