JPS5633874A - Semiconductor device builtin with photocell - Google Patents
Semiconductor device builtin with photocellInfo
- Publication number
- JPS5633874A JPS5633874A JP10915379A JP10915379A JPS5633874A JP S5633874 A JPS5633874 A JP S5633874A JP 10915379 A JP10915379 A JP 10915379A JP 10915379 A JP10915379 A JP 10915379A JP S5633874 A JPS5633874 A JP S5633874A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photocell
- semiconductor device
- builtin
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To make ir possible to provide the semiconductor builtin with the photocell having a large light receiving area by a method wherein the photocell portion is superpased on a circuit portion that formed on the surface of a semiconductor substrate. CONSTITUTION:The curcuit portion 2 is formed on the surface of the semiconductor substrate 1. A stabilized film 3 is coated on the circuit 2, an aluminum film 4 is formed thereupon. Further, an Si film 5 and an SiO2 film 6 are formed on the alumium film 4, the photocell portion is formed on the upper layers of the circuit portion 2 by selectively contacting electrodes 7, 7' on the Si film 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10915379A JPS5633874A (en) | 1979-08-29 | 1979-08-29 | Semiconductor device builtin with photocell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10915379A JPS5633874A (en) | 1979-08-29 | 1979-08-29 | Semiconductor device builtin with photocell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5633874A true JPS5633874A (en) | 1981-04-04 |
Family
ID=14502963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10915379A Pending JPS5633874A (en) | 1979-08-29 | 1979-08-29 | Semiconductor device builtin with photocell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5633874A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5483386A (en) * | 1977-12-15 | 1979-07-03 | Matsushita Electric Ind Co Ltd | Semiconductor device |
-
1979
- 1979-08-29 JP JP10915379A patent/JPS5633874A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5483386A (en) * | 1977-12-15 | 1979-07-03 | Matsushita Electric Ind Co Ltd | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5743438A (en) | Semiconductor device and manufacture thereof | |
| JPS53118367A (en) | Manufacture of semiconductor | |
| JPS5633874A (en) | Semiconductor device builtin with photocell | |
| JPS5721875A (en) | Photosensor | |
| JPS5633891A (en) | Light emitting semiconductor device | |
| JPS57104279A (en) | Photo isolator | |
| JPS5617078A (en) | Semiconductor device containing photosensor | |
| JPS57104241A (en) | Semiconductor device | |
| GB2184857B (en) | Improvements in or relating to radiation sensitive devices | |
| JPS534469A (en) | Semiconductor device | |
| JPS5254388A (en) | Light emitting diode | |
| JPS52117063A (en) | Preparation of ohmic ontact layer in semiconductor device | |
| JPS5227391A (en) | Contact forming method of semiconductor device | |
| JPS5317286A (en) | Production of semiconductor device | |
| JPS5263685A (en) | Production of semiconductor device | |
| JPS547867A (en) | Manufacture for semiconductor device | |
| JPS53139476A (en) | Manufacture of semiconductor device | |
| JPS5661156A (en) | Preparation of semiconductor resistor | |
| JPS575329A (en) | Manufacture of semiconductor device | |
| JPS5378777A (en) | Semiconductor device | |
| JPS5352388A (en) | Semiconductor device | |
| JPS52151567A (en) | Protecting method of wiring layers | |
| JPS5649558A (en) | Integrated circuit | |
| JPS5732653A (en) | Manufacture of semiconductor device | |
| JPS6472532A (en) | Manufacture of semiconductor device |