JPS5661156A - Preparation of semiconductor resistor - Google Patents
Preparation of semiconductor resistorInfo
- Publication number
- JPS5661156A JPS5661156A JP13914879A JP13914879A JPS5661156A JP S5661156 A JPS5661156 A JP S5661156A JP 13914879 A JP13914879 A JP 13914879A JP 13914879 A JP13914879 A JP 13914879A JP S5661156 A JPS5661156 A JP S5661156A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- resistor
- area
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000009434 installation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a device with high resistance and a small area for installation by a method wherein N2 plasma is applied to the surface of a semiconductor substrate where a diffusion area is provided to allow a Si3N4 film to occur, and the film is covered by a SiO2 film, and then the Si3N4 film on the diffusion area exposed by a window made in the SiO2 film is used as a resistor. CONSTITUTION:A reverse conductive type region 2 is formed by diffusion on a semiconductor substrate 1 of a single conductive type. N2 plasma is applied to the whole area including the reverse conductive type region to nitrify the Si constituting the substrate 1 and the region 2 and then form a Si3N4 film 9. Next, the whole surface area is covered with a SiO2 film 3 and a window is made in the position corresponding to the central portion of the region 2 to expose the film 9 to be used as a resistor and an Al electrode 4 is fixed to it. Otherwise, the film 9 can be provided on only the surface of the region 2. By so doing, it is possible to permanently form a device with high resistance and a small area because the Si3N4 film produced by the irradiation of N2 plasma is used as a resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13914879A JPS5661156A (en) | 1979-10-25 | 1979-10-25 | Preparation of semiconductor resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13914879A JPS5661156A (en) | 1979-10-25 | 1979-10-25 | Preparation of semiconductor resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5661156A true JPS5661156A (en) | 1981-05-26 |
Family
ID=15238677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13914879A Pending JPS5661156A (en) | 1979-10-25 | 1979-10-25 | Preparation of semiconductor resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5661156A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114049983A (en) * | 2021-12-27 | 2022-02-15 | 西安宏星电子浆料科技股份有限公司 | Chip resistor paste with high resistance concentration and preparation method thereof |
-
1979
- 1979-10-25 JP JP13914879A patent/JPS5661156A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114049983A (en) * | 2021-12-27 | 2022-02-15 | 西安宏星电子浆料科技股份有限公司 | Chip resistor paste with high resistance concentration and preparation method thereof |
| CN114049983B (en) * | 2021-12-27 | 2022-04-08 | 西安宏星电子浆料科技股份有限公司 | Chip resistor paste with high resistance concentration and preparation method thereof |
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