JPS5694653A - Resistor - Google Patents
ResistorInfo
- Publication number
- JPS5694653A JPS5694653A JP17074179A JP17074179A JPS5694653A JP S5694653 A JPS5694653 A JP S5694653A JP 17074179 A JP17074179 A JP 17074179A JP 17074179 A JP17074179 A JP 17074179A JP S5694653 A JPS5694653 A JP S5694653A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- opening
- film
- thin film
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain the resistor not requiring an occupied area nearly at all by using a thin film of retarded conductivity such as a nitride or oxide of Si held by two conductors between as a resistor when the resistor to be used for IC is prepared. CONSTITUTION:On the surface layer of an Si substrate 1 which is the 1st conductive type is formed a diffusion region 2 which is the 2nd conductive type and the whole surface including the region 2 is convered with an insulation film 3. Next, an opening is made in the film 3 so as for it to correspond to a prescribed position in the region 2 and the thin film 7 of retarded conductivity, constituted by Si3N4, SiO2 or the like, is connected to the side wall and bottom surface of the opening with an overhang to the edge part of the opening, and the film 7 is used as the desired resistor. After that, an electrode 4 is pushed into the opening, and the resistor is formed of the thin film 7 held by the electrode 4 and the diffusion region 2 between. In this way, the area occupied by the device is turned extremely small and also it becomes possible to obtain very high resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17074179A JPS5694653A (en) | 1979-12-27 | 1979-12-27 | Resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17074179A JPS5694653A (en) | 1979-12-27 | 1979-12-27 | Resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5694653A true JPS5694653A (en) | 1981-07-31 |
Family
ID=15910517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17074179A Pending JPS5694653A (en) | 1979-12-27 | 1979-12-27 | Resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5694653A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745967A (en) * | 1980-09-04 | 1982-03-16 | Toshiba Corp | Semiconductor device |
-
1979
- 1979-12-27 JP JP17074179A patent/JPS5694653A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745967A (en) * | 1980-09-04 | 1982-03-16 | Toshiba Corp | Semiconductor device |
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