JPS5721875A - Photosensor - Google Patents

Photosensor

Info

Publication number
JPS5721875A
JPS5721875A JP9595280A JP9595280A JPS5721875A JP S5721875 A JPS5721875 A JP S5721875A JP 9595280 A JP9595280 A JP 9595280A JP 9595280 A JP9595280 A JP 9595280A JP S5721875 A JPS5721875 A JP S5721875A
Authority
JP
Japan
Prior art keywords
layer
photosensor
group
aluminum
photoconductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9595280A
Other languages
Japanese (ja)
Other versions
JPS6322074B2 (en
Inventor
Toshiyuki Komatsu
Masaki Fukaya
Yoshiaki Shirato
Seishiro Yoshioka
Shunichi Uzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP9595280A priority Critical patent/JPS5721875A/en
Publication of JPS5721875A publication Critical patent/JPS5721875A/en
Publication of JPS6322074B2 publication Critical patent/JPS6322074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To improve the durability and reliability of a photosensor by containing no elements of III-a group-aluminum group in the layer region of the side contacting with a photoconductive layer of an electrode layer contacted with the photoconductive layer. CONSTITUTION:A transparent pattern electrode 3 of SnO2 film is formed on a substrate 2, an N<+> type layer 4 is formed thereon, a photoconductive layer 5 made of amorphous material containing silicon as a base and at least one of hydrogen and halogen elements is formed on the overall surface, and an N<+> type layer 6 and aluminum layer 7 are further formed thereon.
JP9595280A 1980-07-14 1980-07-14 Photosensor Granted JPS5721875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9595280A JPS5721875A (en) 1980-07-14 1980-07-14 Photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9595280A JPS5721875A (en) 1980-07-14 1980-07-14 Photosensor

Publications (2)

Publication Number Publication Date
JPS5721875A true JPS5721875A (en) 1982-02-04
JPS6322074B2 JPS6322074B2 (en) 1988-05-10

Family

ID=14151585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9595280A Granted JPS5721875A (en) 1980-07-14 1980-07-14 Photosensor

Country Status (1)

Country Link
JP (1) JPS5721875A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132654A (en) * 1983-01-20 1984-07-30 Fuji Xerox Co Ltd Manufacture of continuous thin film manuscript read-out element
JPS61181158A (en) * 1985-02-06 1986-08-13 Nec Corp Contact type image sensor
JP2011228733A (en) * 2011-06-29 2011-11-10 Mitsubishi Electric Corp Photosensor and method of manufacturing the same
KR20180084984A (en) 2015-12-21 2018-07-25 신와 콘트롤즈 가부시키가이샤 Chiller device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0429508Y2 (en) * 1988-12-05 1992-07-16
JPH03116671A (en) * 1989-09-29 1991-05-17 Riyousei Denso Kk Receiving connection terminal
JPH0355670U (en) * 1989-10-03 1991-05-29

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139341A (en) * 1978-04-20 1979-10-29 Canon Inc Information processing unit
JPS54141594A (en) * 1978-04-24 1979-11-02 Rca Corp Armophous silicon solar battery
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS5548979A (en) * 1978-10-03 1980-04-08 Mitsubishi Electric Corp Manufacturing method of solar cell
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139341A (en) * 1978-04-20 1979-10-29 Canon Inc Information processing unit
JPS54141594A (en) * 1978-04-24 1979-11-02 Rca Corp Armophous silicon solar battery
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS5548979A (en) * 1978-10-03 1980-04-08 Mitsubishi Electric Corp Manufacturing method of solar cell
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132654A (en) * 1983-01-20 1984-07-30 Fuji Xerox Co Ltd Manufacture of continuous thin film manuscript read-out element
JPH0245344B2 (en) * 1983-01-20 1990-10-09 Fuji Xerox Co Ltd
JPS61181158A (en) * 1985-02-06 1986-08-13 Nec Corp Contact type image sensor
JP2011228733A (en) * 2011-06-29 2011-11-10 Mitsubishi Electric Corp Photosensor and method of manufacturing the same
KR20180084984A (en) 2015-12-21 2018-07-25 신와 콘트롤즈 가부시키가이샤 Chiller device

Also Published As

Publication number Publication date
JPS6322074B2 (en) 1988-05-10

Similar Documents

Publication Publication Date Title
JPS56135980A (en) Photoelectric conversion element
DE3683979D1 (en) TRANSPARENT CONDUCTIVE LAYER AND METHOD FOR THE PRODUCTION THEREOF.
JPS5451831A (en) Photomask material
JPS5721875A (en) Photosensor
JPS5217031A (en) Thermal fixing device
JPS57204178A (en) Optoelectric transducer
KR870008225A (en) Metal layer attachment method using photosensitive cathode for adhesion of metal structure in organic polymer film
JPS56152278A (en) Device for generating photo-electromotive force
JPS5377628A (en) Electrophotographic system
JPS57114290A (en) Amorphous thin film solar battery
JPS5739569A (en) Solid state image pickup device
JPS644083A (en) Photovoltaic device
JPS5745980A (en) Amorphous solar battery and manufacture thereof
ATE26622T1 (en) ELECTROPHOTOGRAPHY.
JPS5739587A (en) Manufacture of photoelectric converter
JPS5745288A (en) Thin film photo diode
JPS5721874A (en) Amorphous solar battery
JPS6459237A (en) Electrophotographic sensitive body
JPS5411674A (en) Semiconductor device of mesa type
JPS6459235A (en) Electrophotographic sensitive body
JPS5473097A (en) Gas sensor
JPS52129393A (en) Solar battery
JPS57115555A (en) Photoconductive material
JPS55124277A (en) Semiconductor photodetector
JPS6459236A (en) Electrophotographic sensitive body