JPS5558561A - Semiconductor capacitance element - Google Patents
Semiconductor capacitance elementInfo
- Publication number
- JPS5558561A JPS5558561A JP13053678A JP13053678A JPS5558561A JP S5558561 A JPS5558561 A JP S5558561A JP 13053678 A JP13053678 A JP 13053678A JP 13053678 A JP13053678 A JP 13053678A JP S5558561 A JPS5558561 A JP S5558561A
- Authority
- JP
- Japan
- Prior art keywords
- capacitance element
- resistance
- connecting unit
- divide
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To eliminate the effect of parasitic resistance, by providing a connecting unit in a semiconductor well and in a polycrystalline semiconductor layer at positions where these are divided into resistance regions and connecting them electrically.
CONSTITUTION: Polycrystalline Si layer 6 is provided with connecting unit 8' by means of Al wiring so as to divide the sheet resistance by opening a window on the protective film. P+ well is provided with diffusion layer 4', and on top of this is provided connecting unit 9' by means of Al wiring so as to divide the diffusion resistance. By this structure, the effect of parasitic resistance on the capacitance element used for high-frequency oscillation can be eliminated. It is effective when the distances between MOS gate and source and drain, used as capacitance element, are made short as much as possible and equal.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13053678A JPS5558561A (en) | 1978-10-25 | 1978-10-25 | Semiconductor capacitance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13053678A JPS5558561A (en) | 1978-10-25 | 1978-10-25 | Semiconductor capacitance element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5558561A true JPS5558561A (en) | 1980-05-01 |
| JPS6236395B2 JPS6236395B2 (en) | 1987-08-06 |
Family
ID=15036630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13053678A Granted JPS5558561A (en) | 1978-10-25 | 1978-10-25 | Semiconductor capacitance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5558561A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5850767A (en) * | 1981-09-21 | 1983-03-25 | Hitachi Ltd | Semiconductor device |
| JPS58159367A (en) * | 1982-03-17 | 1983-09-21 | Matsushita Electronics Corp | Mos capacitor device |
| JPS58210668A (en) * | 1982-05-31 | 1983-12-07 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit |
| JPS5931049A (en) * | 1982-08-13 | 1984-02-18 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
| JPH01162381A (en) * | 1987-11-27 | 1989-06-26 | American Teleph & Telegr Co <Att> | Voltage control variable capacitor and variable frequency oscillator |
| US6410954B1 (en) | 2000-04-10 | 2002-06-25 | Koninklijke Philips Electronics N.V. | Multilayered capacitor structure with alternately connected concentric lines for deep sub-micron CMOS |
-
1978
- 1978-10-25 JP JP13053678A patent/JPS5558561A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5850767A (en) * | 1981-09-21 | 1983-03-25 | Hitachi Ltd | Semiconductor device |
| JPS58159367A (en) * | 1982-03-17 | 1983-09-21 | Matsushita Electronics Corp | Mos capacitor device |
| JPS58210668A (en) * | 1982-05-31 | 1983-12-07 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit |
| JPS5931049A (en) * | 1982-08-13 | 1984-02-18 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
| JPH01162381A (en) * | 1987-11-27 | 1989-06-26 | American Teleph & Telegr Co <Att> | Voltage control variable capacitor and variable frequency oscillator |
| US6410954B1 (en) | 2000-04-10 | 2002-06-25 | Koninklijke Philips Electronics N.V. | Multilayered capacitor structure with alternately connected concentric lines for deep sub-micron CMOS |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6236395B2 (en) | 1987-08-06 |
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