JPS5395582A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5395582A
JPS5395582A JP1036477A JP1036477A JPS5395582A JP S5395582 A JPS5395582 A JP S5395582A JP 1036477 A JP1036477 A JP 1036477A JP 1036477 A JP1036477 A JP 1036477A JP S5395582 A JPS5395582 A JP S5395582A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
gate
film
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1036477A
Other languages
Japanese (ja)
Other versions
JPS5951153B2 (en
Inventor
Tsutomu Yoshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1036477A priority Critical patent/JPS5951153B2/en
Publication of JPS5395582A publication Critical patent/JPS5395582A/en
Publication of JPS5951153B2 publication Critical patent/JPS5951153B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To eliminate open wire of MOSFET of Si gate, by covering the metallic wiring formation part for the polycrystal Si gate and the source and drain domain with Si3N4 film and by eliminating the Si3N4 film for a given part after oxidizing the semiconductor substrate for other parts.
COPYRIGHT: (C)1978,JPO&Japio
JP1036477A 1977-02-01 1977-02-01 Manufacturing method of semiconductor device Expired JPS5951153B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1036477A JPS5951153B2 (en) 1977-02-01 1977-02-01 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1036477A JPS5951153B2 (en) 1977-02-01 1977-02-01 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5395582A true JPS5395582A (en) 1978-08-21
JPS5951153B2 JPS5951153B2 (en) 1984-12-12

Family

ID=11748098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1036477A Expired JPS5951153B2 (en) 1977-02-01 1977-02-01 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5951153B2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102036463B1 (en) 2016-11-21 2019-10-24 닛토덴코 가부시키가이샤 Adhesive sheet
JP7149699B2 (en) 2017-11-01 2022-10-07 日東電工株式会社 Thermally conductive adhesive sheet
JP7058106B2 (en) 2017-11-01 2022-04-21 日東電工株式会社 Adhesive sheet
JP6605562B2 (en) 2017-11-20 2019-11-13 日東電工株式会社 Adhesive sheet
JP6496066B1 (en) 2017-11-20 2019-04-03 日東電工株式会社 Reinforcement film
JP7050498B2 (en) 2018-01-24 2022-04-08 日東電工株式会社 Laminated sheet and roll
CN113166600B (en) 2018-11-30 2022-08-16 日东电工株式会社 Adhesive sheet
WO2020145188A1 (en) 2019-01-08 2020-07-16 日東電工株式会社 Pressure-sensitive adhesive sheet

Also Published As

Publication number Publication date
JPS5951153B2 (en) 1984-12-12

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