JPS5368081A - Manufacture of mos-structure field effect type semiconductor device - Google Patents

Manufacture of mos-structure field effect type semiconductor device

Info

Publication number
JPS5368081A
JPS5368081A JP14360376A JP14360376A JPS5368081A JP S5368081 A JPS5368081 A JP S5368081A JP 14360376 A JP14360376 A JP 14360376A JP 14360376 A JP14360376 A JP 14360376A JP S5368081 A JPS5368081 A JP S5368081A
Authority
JP
Japan
Prior art keywords
manufacture
mos
semiconductor device
type semiconductor
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14360376A
Other languages
Japanese (ja)
Inventor
Takeshi Yamano
Shinobu Fukunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14360376A priority Critical patent/JPS5368081A/en
Publication of JPS5368081A publication Critical patent/JPS5368081A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To manufacture a MOSFET by piling the Si layer of the same conductor type as the substrate onto the Si substrate via SiO2 film with opening and then forming the channel at the opening part.
COPYRIGHT: (C)1978,JPO&Japio
JP14360376A 1976-11-29 1976-11-29 Manufacture of mos-structure field effect type semiconductor device Pending JPS5368081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14360376A JPS5368081A (en) 1976-11-29 1976-11-29 Manufacture of mos-structure field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14360376A JPS5368081A (en) 1976-11-29 1976-11-29 Manufacture of mos-structure field effect type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5368081A true JPS5368081A (en) 1978-06-17

Family

ID=15342554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14360376A Pending JPS5368081A (en) 1976-11-29 1976-11-29 Manufacture of mos-structure field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5368081A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4859782A (en) * 1971-11-25 1973-08-22
JPS4863681A (en) * 1971-12-06 1973-09-04
JPS49104533A (en) * 1973-02-06 1974-10-03
JPS5099482A (en) * 1973-12-28 1975-08-07

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4859782A (en) * 1971-11-25 1973-08-22
JPS4863681A (en) * 1971-12-06 1973-09-04
JPS49104533A (en) * 1973-02-06 1974-10-03
JPS5099482A (en) * 1973-12-28 1975-08-07

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