JPS57170563A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS57170563A JPS57170563A JP56055874A JP5587481A JPS57170563A JP S57170563 A JPS57170563 A JP S57170563A JP 56055874 A JP56055874 A JP 56055874A JP 5587481 A JP5587481 A JP 5587481A JP S57170563 A JPS57170563 A JP S57170563A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layers
- layer
- forming
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To enhance the integration of a semiconductor integrated circuit device by forming the second and third P type layers on an N type epitaxial layer on a P type Si substrate, and forming an N type layer on the second P type layer, thereby forming an I<2>L having a vertical injector. CONSTITUTION:P type layers 3, 3' having approx. lum in depth are formed in an N type epitaxial layer 2 on a P type Si substrate 1, and N type layers 4-4''', 6 having approx. 0.5mum in depth are formed therein. A surface oxidized film is removed, a polysilicon is covered, is selectively oxidized and is converted into an SiO2 film 9. Ions are selectively implanted in the unoxidized part to form N type layers 7-7''' and P type layers 8, 8'''. A PNP type vertical injector is formed in the layer 8-6-3(3'), and since the width of the base is narrow, hFE is high. The layers 7-7''' and 8, 8'' are used as wires, and the area of the wires can be reduced. Since the injector is formed vertically, the occupying area can be reduced as compared with the conventional lateral type, thereby obtaining an I<2>L having high integration density.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56055874A JPS57170563A (en) | 1981-04-14 | 1981-04-14 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56055874A JPS57170563A (en) | 1981-04-14 | 1981-04-14 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57170563A true JPS57170563A (en) | 1982-10-20 |
Family
ID=13011233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56055874A Pending JPS57170563A (en) | 1981-04-14 | 1981-04-14 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57170563A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5157295A (en) * | 1974-11-15 | 1976-05-19 | Tokyo Shibaura Electric Co | |
| JPS55165670A (en) * | 1979-06-12 | 1980-12-24 | Toshiba Corp | Semiconductor device |
-
1981
- 1981-04-14 JP JP56055874A patent/JPS57170563A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5157295A (en) * | 1974-11-15 | 1976-05-19 | Tokyo Shibaura Electric Co | |
| JPS55165670A (en) * | 1979-06-12 | 1980-12-24 | Toshiba Corp | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0078890A3 (en) | Method of fabrication of dielectrically isolated cmos device with an isolated slot | |
| JPS57170563A (en) | Semiconductor integrated circuit device | |
| JPS57204144A (en) | Insulating and isolating method for semiconductor integrated circuit | |
| JPS577157A (en) | Semiconductor device | |
| JPS5612748A (en) | Semiconductor device | |
| JPS572519A (en) | Manufacture of semiconductor device | |
| JPS56157044A (en) | Insulating isolation of semiconductor element | |
| JPS57157540A (en) | Semiconductor device | |
| JPS6457641A (en) | Manufacture of semiconductor device | |
| JPS5658258A (en) | Semiconductor integrated circuit | |
| JPS55105340A (en) | Semiconductor device and its manufacturing method | |
| JPS54116884A (en) | Semiconductor device | |
| JPS5513947A (en) | Semiconductor integrated circuit device | |
| JPS577943A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS5775452A (en) | Mos capacitor in semiconductor integrated circuit and manufacture thereof | |
| JPS55132062A (en) | Semiconductor memory device | |
| JPS6431434A (en) | Semiconductor integrated circuit | |
| JPS5749249A (en) | Semiconductor integrated circuit device | |
| JPS6415974A (en) | Semiconductor device | |
| JPS5522878A (en) | Insulation gate type field effect semiconductor device | |
| JPS5645046A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JPS5791521A (en) | Manufacture of semiconductor device | |
| JPS57190348A (en) | Manufacture of bipolar semiconductor device | |
| JPS5512775A (en) | Manufacturing method of semiconductor | |
| JPS5526682A (en) | Semiconductor integrated circuit device provided with lateral transistor |