JPS5791521A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5791521A
JPS5791521A JP16752680A JP16752680A JPS5791521A JP S5791521 A JPS5791521 A JP S5791521A JP 16752680 A JP16752680 A JP 16752680A JP 16752680 A JP16752680 A JP 16752680A JP S5791521 A JPS5791521 A JP S5791521A
Authority
JP
Japan
Prior art keywords
hole
oxidized film
region
photoresist
covered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16752680A
Other languages
Japanese (ja)
Other versions
JPS632133B2 (en
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16752680A priority Critical patent/JPS5791521A/en
Publication of JPS5791521A publication Critical patent/JPS5791521A/en
Publication of JPS632133B2 publication Critical patent/JPS632133B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To form a region having different depth by injecting the first impurity ions with an insulating film having a hole on a substrate as a mask to form a deep region, then reducing the insulating film and forming the second impurity injection layer. CONSTITUTION:A thin oxidized film having holes 13, 14 is formed on an N-type Si substrate 11, a photoresist is covered on the part except the hole 13, B or the like ions are implanted to form a deep P-type region 6, an oxidized film is then reduced in thickness, a new thin oxidized film 12'' is formed at the hole, a photoresist 17 is covered on the hole 13 side, a shallow P-type region 18 is then formed. In this manner, the oxidized film is eventually thinned, and accordingly stepwise disconnection of wire can be prevented, and the respective regions can be formed by self-alignment.
JP16752680A 1980-11-28 1980-11-28 Manufacture of semiconductor device Granted JPS5791521A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16752680A JPS5791521A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16752680A JPS5791521A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5791521A true JPS5791521A (en) 1982-06-07
JPS632133B2 JPS632133B2 (en) 1988-01-18

Family

ID=15851323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16752680A Granted JPS5791521A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5791521A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02191337A (en) * 1989-01-19 1990-07-27 Sanyo Electric Co Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348458A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348458A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02191337A (en) * 1989-01-19 1990-07-27 Sanyo Electric Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS632133B2 (en) 1988-01-18

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