JPS6430254A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6430254A
JPS6430254A JP18683787A JP18683787A JPS6430254A JP S6430254 A JPS6430254 A JP S6430254A JP 18683787 A JP18683787 A JP 18683787A JP 18683787 A JP18683787 A JP 18683787A JP S6430254 A JPS6430254 A JP S6430254A
Authority
JP
Japan
Prior art keywords
oxide film
layer
ballast resistance
guard ring
resistance layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18683787A
Other languages
Japanese (ja)
Inventor
Satoru Kishimoto
Akihisa Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18683787A priority Critical patent/JPS6430254A/en
Publication of JPS6430254A publication Critical patent/JPS6430254A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make a device smaller in size and to reduce parasitic capacity by a method wherein a guard ring layer and a ballast resistance layer are formed shallow in depth and an oxide film ring is made smaller in width. CONSTITUTION:A silicon oxide film 2 is formed on an n-type semiconductor substrate 1, etching is accomplished by using a photoresist film 3, and then a guard ring layer opening 4, an oxide film ring 5, and a ballast resistance layer opening 7 are provided. The photoresist film 3 is then removed. Making use of the selective implantation effect in the silicon oxide film 2, a p-type impurity, opposite in conductivity to the n-type semiconductor substrate 1, is diffused, which enables the simultaneous formation of a guard ring layer 6 and a ballast resistance layer 8. In this design, the guard ring layer 6 and the ballast resistance layer 8 are formed shallow in depth, and the oxide film ring 5 may be smaller in width.
JP18683787A 1987-07-27 1987-07-27 Semiconductor device Pending JPS6430254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18683787A JPS6430254A (en) 1987-07-27 1987-07-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18683787A JPS6430254A (en) 1987-07-27 1987-07-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6430254A true JPS6430254A (en) 1989-02-01

Family

ID=16195495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18683787A Pending JPS6430254A (en) 1987-07-27 1987-07-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6430254A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220898A (en) * 1991-08-22 1993-06-22 Toyota Jidosha Kabushiki Kaisha Pressure control system for controlling pressure in fuel tank of engine by controlling discharging of evaporated fuel in fuel tank into canister

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220898A (en) * 1991-08-22 1993-06-22 Toyota Jidosha Kabushiki Kaisha Pressure control system for controlling pressure in fuel tank of engine by controlling discharging of evaporated fuel in fuel tank into canister

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