JPS6465874A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To manufacture a semiconductor device easily which is provided with a diffusion layer not only thin but also small in electric resistance by a method wherein a diffusion layer is formed in a substrate through a source poly-silicon layer and a drain poly-silicon layer both formed on the substrate as a diffusing source, and an electrode is formed on these layers each. CONSTITUTION:A poly-silicon layer is provided to a silicon substrate 1, patterning is performed thereon by implanting the impurity ions for the formation of a source section 4 and a drain section 5, and the substrate 1 is subjected to a heat treatment tor the formation of a silicon oxide film 6 which covers the whole face, when impurity is diffused into the corresponding regions of the substrate 1 for the formation of a low concentrated diffusion layer 7 through the source section 4 and the drain section 5 utilized as a diffusion source. A gate electrode 9 of aluminum is formed through sputtering evaporation, etching, or the like and impurity ions are implanted through the gate electrode used as a mask, so that a high concentrated diffusion layer is formed in the region 7. Thereafter, a source electrode 13 and a drain electrode 14 both of aluminum are formed on the layers 4 and 5 respectively, and thus a MOSFET semiconductor device short in a gate length is easily formed, which is provided with a diffusion layer not only shallow but also small in electric resistance.