JPS57207375A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57207375A JPS57207375A JP9183281A JP9183281A JPS57207375A JP S57207375 A JPS57207375 A JP S57207375A JP 9183281 A JP9183281 A JP 9183281A JP 9183281 A JP9183281 A JP 9183281A JP S57207375 A JPS57207375 A JP S57207375A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystal
- patterned
- films
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H01L29/78—
Abstract
PURPOSE:To obtain an MOS type FET having high threshold voltage by a method wherein a polycrystal Si film not doped and a silicide film are laminated and formed to the whole surface containing a gate oxide film with an opening, the silicide film is patterned, impurity ions are implanted in the polycrystal film exposed between the pattern, and source and drain regions are shaped through heat treatment while the polycrystal Si is changed into an oxide. CONSTITUTION:A thick field oxide film 32 is formed to the peripheral section of a P type Si substrate 31, the inside is coated with the thin gate oxide film 33, and the predetermined opening is shaped. The polycrystal Si film 34 to which an impurity is not doped intentionally and the Mo silicide film 35 are laminated and formed to the whole surface containing these films, and the film 35 is patterned and only gate electrode wiring and source and drain layer wiring are left. P Ions are implanted in the film 34 sections exposed between these wiring, the ions are diffused through heat treatment, the N type source and drain regions 36 are shaped while the films 34 on the regions are changed into the oxide 37, and sections between the films 35', 35'' patterned are insulated and isolated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9183281A JPS57207375A (en) | 1981-06-15 | 1981-06-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9183281A JPS57207375A (en) | 1981-06-15 | 1981-06-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57207375A true JPS57207375A (en) | 1982-12-20 |
Family
ID=14037566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9183281A Pending JPS57207375A (en) | 1981-06-15 | 1981-06-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57207375A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4653173A (en) * | 1985-03-04 | 1987-03-31 | Signetics Corporation | Method of manufacturing an insulated gate field effect device |
-
1981
- 1981-06-15 JP JP9183281A patent/JPS57207375A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4653173A (en) * | 1985-03-04 | 1987-03-31 | Signetics Corporation | Method of manufacturing an insulated gate field effect device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS55160457A (en) | Semiconductor device | |
| JPS5626467A (en) | Semiconductor device and the manufacturing process | |
| JPS5688354A (en) | Semiconductor integrated circuit device | |
| JPS5660063A (en) | Manufacture of semiconductor device | |
| JPS57207375A (en) | Manufacture of semiconductor device | |
| JPS56125875A (en) | Semiconductor integrated circuit device | |
| JPS55157241A (en) | Manufacture of semiconductor device | |
| JPS5632757A (en) | Insulated gate type transistor and integrated circuit | |
| JPS5583263A (en) | Mos semiconductor device | |
| JPS57149774A (en) | Semiconductor device | |
| JPS5694671A (en) | Manufacture of mis field-effect semiconductor device | |
| JPS57207374A (en) | Manufacture of semiconductor device | |
| JPS5766672A (en) | Semiconductor device | |
| JPS5591873A (en) | Manufacture of semiconductor device | |
| JPS56104470A (en) | Semiconductor device and manufacture thereof | |
| JPS57207373A (en) | Manufacture of semiconductor device | |
| JPS57145372A (en) | Manufacture of semiconductor device | |
| JPS6465875A (en) | Thin film transistor and manufacture thereof | |
| JPS561572A (en) | Manufacture of semiconductor device | |
| JPS57128957A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JPS6465874A (en) | Manufacture of semiconductor device | |
| JPS57141966A (en) | Manufacture of semiconductor device | |
| JPS54134579A (en) | Mis semiconductor device | |
| JPS57141968A (en) | Insulated gate type field effect transistor | |
| JPS56105675A (en) | Manufacture of semiconductor device |