JPS5775452A - Mos capacitor in semiconductor integrated circuit and manufacture thereof - Google Patents

Mos capacitor in semiconductor integrated circuit and manufacture thereof

Info

Publication number
JPS5775452A
JPS5775452A JP15099780A JP15099780A JPS5775452A JP S5775452 A JPS5775452 A JP S5775452A JP 15099780 A JP15099780 A JP 15099780A JP 15099780 A JP15099780 A JP 15099780A JP S5775452 A JPS5775452 A JP S5775452A
Authority
JP
Japan
Prior art keywords
concave part
mos capacitor
capacitor
manufacture
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15099780A
Other languages
Japanese (ja)
Inventor
Teruo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15099780A priority Critical patent/JPS5775452A/en
Publication of JPS5775452A publication Critical patent/JPS5775452A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the compact and large capacity MOS capacitor by forming a concave part in a semiconductor substrate, covering the surface of said concave part by a dielectric thin film, and embedding an upper electrode therein. CONSTITUTION:Etching is performed in the semiconductor substrate 11 in a concave shape. The surface of the concave part is covered by the dielectric thin film 12, and the upper electrode 13 is embedded in said concave part. On the surface of the substrate part of the concave part, an impurity injected region 14 which is to become another electrode for the capacitor is formed. The capacity of the capacitor is increased to 1+[2a(l+m)/l.m]times, where a is the depth of the concave part of said MOS capacitor and the definition of (lXm) is the length multiplied by the width of the dimension of the plane of the electrode. In this constitution, the MOS capacitor having the small occupying area and the large capacity can be obtained.
JP15099780A 1980-10-28 1980-10-28 Mos capacitor in semiconductor integrated circuit and manufacture thereof Pending JPS5775452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15099780A JPS5775452A (en) 1980-10-28 1980-10-28 Mos capacitor in semiconductor integrated circuit and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15099780A JPS5775452A (en) 1980-10-28 1980-10-28 Mos capacitor in semiconductor integrated circuit and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5775452A true JPS5775452A (en) 1982-05-12

Family

ID=15509019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15099780A Pending JPS5775452A (en) 1980-10-28 1980-10-28 Mos capacitor in semiconductor integrated circuit and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5775452A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158654A (en) * 1984-01-28 1985-08-20 Seiko Epson Corp Semiconductor device
JPS60235462A (en) * 1984-05-08 1985-11-22 Nec Corp Semiconductor device and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376686A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376686A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158654A (en) * 1984-01-28 1985-08-20 Seiko Epson Corp Semiconductor device
JPS60235462A (en) * 1984-05-08 1985-11-22 Nec Corp Semiconductor device and manufacture thereof

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