JPS5376686A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5376686A JPS5376686A JP15239576A JP15239576A JPS5376686A JP S5376686 A JPS5376686 A JP S5376686A JP 15239576 A JP15239576 A JP 15239576A JP 15239576 A JP15239576 A JP 15239576A JP S5376686 A JPS5376686 A JP S5376686A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- capactors
- fraction
- conventional ones
- same capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a semiconductor device having capactors which have the same capacity even if electrode areas is a fraction of that of conventional ones, i.e., miniaturized capacitors.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15239576A JPS5376686A (en) | 1976-12-17 | 1976-12-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15239576A JPS5376686A (en) | 1976-12-17 | 1976-12-17 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5376686A true JPS5376686A (en) | 1978-07-07 |
Family
ID=15539569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15239576A Pending JPS5376686A (en) | 1976-12-17 | 1976-12-17 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5376686A (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5660045A (en) * | 1979-10-23 | 1981-05-23 | Nec Corp | Semiconductor device |
JPS5775452A (en) * | 1980-10-28 | 1982-05-12 | Toshiba Corp | Mos capacitor in semiconductor integrated circuit and manufacture thereof |
JPS583259A (en) * | 1981-06-29 | 1983-01-10 | Fujitsu Ltd | Manufacture of vertical type capacitor |
JPS5891669A (en) * | 1981-11-26 | 1983-05-31 | Seiko Epson Corp | Semiconductor device |
US4641279A (en) * | 1983-03-07 | 1987-02-03 | Hitachi, Ltd. | Semiconductor memory device having a dummy cell and a memory cell which is twice the size of the dummy cell |
US4656054A (en) * | 1984-08-16 | 1987-04-07 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device involving a capacitor |
US4688063A (en) * | 1984-06-29 | 1987-08-18 | International Business Machines Corporation | Dynamic ram cell with MOS trench capacitor in CMOS |
JPS6323352A (en) * | 1987-05-22 | 1988-01-30 | Toshiba Corp | Manufacture of semiconductor device |
JPS6323351A (en) * | 1987-05-22 | 1988-01-30 | Toshiba Corp | Manufacture of semiconductor device |
US4751557A (en) * | 1982-03-10 | 1988-06-14 | Hitachi, Ltd. | Dram with FET stacked over capacitor |
JPH02191370A (en) * | 1989-12-15 | 1990-07-27 | Seiko Epson Corp | Semiconductor device |
US5428236A (en) * | 1983-12-15 | 1995-06-27 | Kabushiki Kaisha Toshiba | Semiconductor memory device having trenched capicitor |
US6614094B2 (en) * | 1999-12-21 | 2003-09-02 | Stmicroelectronics S.R.L. | High integration density vertical capacitor structure and fabrication process |
DE102004063560A1 (en) * | 2004-12-30 | 2006-07-20 | Infineon Technologies Ag | Capacitive structure for semiconductor technology in e.g. consumer electronics, industries and automobile electronics has trench which adjoins trough zone, which forms second electrode of capacitive structure, formed in semiconductor body |
-
1976
- 1976-12-17 JP JP15239576A patent/JPS5376686A/en active Pending
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6322068B2 (en) * | 1979-10-23 | 1988-05-10 | Nippon Electric Co | |
JPS5660045A (en) * | 1979-10-23 | 1981-05-23 | Nec Corp | Semiconductor device |
JPS5775452A (en) * | 1980-10-28 | 1982-05-12 | Toshiba Corp | Mos capacitor in semiconductor integrated circuit and manufacture thereof |
JPS583259A (en) * | 1981-06-29 | 1983-01-10 | Fujitsu Ltd | Manufacture of vertical type capacitor |
JPH0330302B2 (en) * | 1981-06-29 | 1991-04-26 | ||
JPS5891669A (en) * | 1981-11-26 | 1983-05-31 | Seiko Epson Corp | Semiconductor device |
US4751557A (en) * | 1982-03-10 | 1988-06-14 | Hitachi, Ltd. | Dram with FET stacked over capacitor |
US4641279A (en) * | 1983-03-07 | 1987-02-03 | Hitachi, Ltd. | Semiconductor memory device having a dummy cell and a memory cell which is twice the size of the dummy cell |
US5428236A (en) * | 1983-12-15 | 1995-06-27 | Kabushiki Kaisha Toshiba | Semiconductor memory device having trenched capicitor |
US4688063A (en) * | 1984-06-29 | 1987-08-18 | International Business Machines Corporation | Dynamic ram cell with MOS trench capacitor in CMOS |
US4656054A (en) * | 1984-08-16 | 1987-04-07 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device involving a capacitor |
JPS6323351A (en) * | 1987-05-22 | 1988-01-30 | Toshiba Corp | Manufacture of semiconductor device |
JPS6323352A (en) * | 1987-05-22 | 1988-01-30 | Toshiba Corp | Manufacture of semiconductor device |
JPH0441507B2 (en) * | 1987-05-22 | 1992-07-08 | Tokyo Shibaura Electric Co | |
JPH0441506B2 (en) * | 1987-05-22 | 1992-07-08 | Tokyo Shibaura Electric Co | |
JPH02191370A (en) * | 1989-12-15 | 1990-07-27 | Seiko Epson Corp | Semiconductor device |
US6614094B2 (en) * | 1999-12-21 | 2003-09-02 | Stmicroelectronics S.R.L. | High integration density vertical capacitor structure and fabrication process |
DE102004063560A1 (en) * | 2004-12-30 | 2006-07-20 | Infineon Technologies Ag | Capacitive structure for semiconductor technology in e.g. consumer electronics, industries and automobile electronics has trench which adjoins trough zone, which forms second electrode of capacitive structure, formed in semiconductor body |
DE102004063560B4 (en) * | 2004-12-30 | 2009-01-29 | Infineon Technologies Ag | Capacitive structure and method of making a capacitive structure |
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