JPS6418249A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6418249A JPS6418249A JP62175131A JP17513187A JPS6418249A JP S6418249 A JPS6418249 A JP S6418249A JP 62175131 A JP62175131 A JP 62175131A JP 17513187 A JP17513187 A JP 17513187A JP S6418249 A JPS6418249 A JP S6418249A
- Authority
- JP
- Japan
- Prior art keywords
- capacitance
- electrode
- groove
- substrate
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
Abstract
PURPOSE:To reduce an area on a wafer required to obtain a capacitance value identical to the conventional capacitance by a method wherein a groove is made in a silicon substrate, the substrate is used as a first electrode for the capacitance, an insulating film is formed on side walls and a bottom face of the groove made in the substrate, the groove is filled with a conductor and the conductor is used as a second electrode for the capacitance. CONSTITUTION:A groove is made in a silicon substrate 1; the substrate 1 is used as a first electrode 6 for the capacitance; an insulating film 7 is formed on side walls and a bottom face of the groove made in the substrate 1; the groove is filled with a conductor; this conductor is used as a second electrode 8 for the capacitance. Although an area for the formed capacitance by piling up the first electrode 6 and the second electrode 8 is large, a plane area on the wafer 1 is small. By this setup, it is possible to obtain a high-capacitance value even with a small area on the wafer required to form the capacitance in the boosting circuit of a semiconductor nonvolatile memory.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62175131A JPS6418249A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62175131A JPS6418249A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6418249A true JPS6418249A (en) | 1989-01-23 |
Family
ID=15990828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62175131A Pending JPS6418249A (en) | 1987-07-14 | 1987-07-14 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418249A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003309182A (en) * | 2002-04-17 | 2003-10-31 | Hitachi Ltd | Method of manufacturing semiconductor device and semiconductor device |
| JP2009071325A (en) * | 2008-11-25 | 2009-04-02 | Renesas Technology Corp | Semiconductor device and method for manufacturing the same |
-
1987
- 1987-07-14 JP JP62175131A patent/JPS6418249A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003309182A (en) * | 2002-04-17 | 2003-10-31 | Hitachi Ltd | Method of manufacturing semiconductor device and semiconductor device |
| JP2009071325A (en) * | 2008-11-25 | 2009-04-02 | Renesas Technology Corp | Semiconductor device and method for manufacturing the same |
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