JPS5612765A - Mos dynamic memory cell - Google Patents

Mos dynamic memory cell

Info

Publication number
JPS5612765A
JPS5612765A JP8687679A JP8687679A JPS5612765A JP S5612765 A JPS5612765 A JP S5612765A JP 8687679 A JP8687679 A JP 8687679A JP 8687679 A JP8687679 A JP 8687679A JP S5612765 A JPS5612765 A JP S5612765A
Authority
JP
Japan
Prior art keywords
memory cell
diffusion layer
node
dynamic memory
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8687679A
Other languages
Japanese (ja)
Inventor
Toru Furuyama
Susumu Kayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8687679A priority Critical patent/JPS5612765A/en
Publication of JPS5612765A publication Critical patent/JPS5612765A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To have a high integration suitably performed by removing a diffusion layer section and by reducing the area required. CONSTITUTION:A diffusion layer 16, a direct-contact hole 17, the first and second polycrystalline silicone 18 and 19, a contact hole 20 and an aluminum 21 are provided on a semiconductor substrate. Then the process such as an ion injection and the like is performed on the direct-contact section of a node. Consequently, the diffusion layer can be removed from the node too, the surface area of the jointed section of the memory node is reduced and the area to one memory cell can be reduced. Also, the above device is effective in the maintenance of memory.
JP8687679A 1979-07-11 1979-07-11 Mos dynamic memory cell Pending JPS5612765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8687679A JPS5612765A (en) 1979-07-11 1979-07-11 Mos dynamic memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8687679A JPS5612765A (en) 1979-07-11 1979-07-11 Mos dynamic memory cell

Publications (1)

Publication Number Publication Date
JPS5612765A true JPS5612765A (en) 1981-02-07

Family

ID=13899025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8687679A Pending JPS5612765A (en) 1979-07-11 1979-07-11 Mos dynamic memory cell

Country Status (1)

Country Link
JP (1) JPS5612765A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154260A (en) * 1982-07-09 1983-09-13 エリヤホ・ハラリ Highly expandable and contractible dynamic ram cell with self signal amplification
JPS6095964A (en) * 1983-09-30 1985-05-29 エリヤホ　ハラリ Dynamic ram cell highly extensible or contractible with self signal amplification

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154260A (en) * 1982-07-09 1983-09-13 エリヤホ・ハラリ Highly expandable and contractible dynamic ram cell with self signal amplification
JPS6095964A (en) * 1983-09-30 1985-05-29 エリヤホ　ハラリ Dynamic ram cell highly extensible or contractible with self signal amplification

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