JPS5390885A - Integrated semiconductor device containing mis transistor and its manufacture - Google Patents

Integrated semiconductor device containing mis transistor and its manufacture

Info

Publication number
JPS5390885A
JPS5390885A JP551277A JP551277A JPS5390885A JP S5390885 A JPS5390885 A JP S5390885A JP 551277 A JP551277 A JP 551277A JP 551277 A JP551277 A JP 551277A JP S5390885 A JPS5390885 A JP S5390885A
Authority
JP
Japan
Prior art keywords
mis transistor
manufacture
semiconductor device
device containing
integrated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP551277A
Other languages
Japanese (ja)
Other versions
JPS5938738B2 (en
Inventor
Ryota Kasai
Katsutoshi Izumi
Akira Ariyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP52005512A priority Critical patent/JPS5938738B2/en
Publication of JPS5390885A publication Critical patent/JPS5390885A/en
Publication of JPS5938738B2 publication Critical patent/JPS5938738B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To secure such constitution that the source and drain regions are connecting to the substrate in terms of the bottom surface position via the insulator layer and to decrease the PN junction capacity occurring between the substrate and these regions. Thus, the operation of MIS transistor can be stabilized without increasing the size of the device.
COPYRIGHT: (C)1978,JPO&Japio
JP52005512A 1977-01-21 1977-01-21 Integrated semiconductor device including MIS transistor and its manufacturing method Expired JPS5938738B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52005512A JPS5938738B2 (en) 1977-01-21 1977-01-21 Integrated semiconductor device including MIS transistor and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52005512A JPS5938738B2 (en) 1977-01-21 1977-01-21 Integrated semiconductor device including MIS transistor and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5390885A true JPS5390885A (en) 1978-08-10
JPS5938738B2 JPS5938738B2 (en) 1984-09-19

Family

ID=11613234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52005512A Expired JPS5938738B2 (en) 1977-01-21 1977-01-21 Integrated semiconductor device including MIS transistor and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5938738B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55129108U (en) * 1979-03-09 1980-09-12
JPS5637664A (en) * 1979-09-05 1981-04-11 Mitsubishi Electric Corp Semiconductor device
JPS5694670A (en) * 1979-12-27 1981-07-31 Fujitsu Ltd Complementary type mis semiconductor device
JPS5739579A (en) * 1980-08-20 1982-03-04 Toshiba Corp Mos semiconductor device and manufacture thereof
JPS6372164A (en) * 1986-08-14 1988-04-01 Yokogawa Hewlett Packard Ltd Manufacture of improved type integrated circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55129108U (en) * 1979-03-09 1980-09-12
JPS5854249Y2 (en) * 1979-03-09 1983-12-10 カルソニックカンセイ株式会社 Defrosting device for automotive air conditioners
JPS5637664A (en) * 1979-09-05 1981-04-11 Mitsubishi Electric Corp Semiconductor device
JPS5694670A (en) * 1979-12-27 1981-07-31 Fujitsu Ltd Complementary type mis semiconductor device
JPS5739579A (en) * 1980-08-20 1982-03-04 Toshiba Corp Mos semiconductor device and manufacture thereof
JPS6372164A (en) * 1986-08-14 1988-04-01 Yokogawa Hewlett Packard Ltd Manufacture of improved type integrated circuit

Also Published As

Publication number Publication date
JPS5938738B2 (en) 1984-09-19

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