JPS5390885A - Integrated semiconductor device containing mis transistor and its manufacture - Google Patents
Integrated semiconductor device containing mis transistor and its manufactureInfo
- Publication number
- JPS5390885A JPS5390885A JP551277A JP551277A JPS5390885A JP S5390885 A JPS5390885 A JP S5390885A JP 551277 A JP551277 A JP 551277A JP 551277 A JP551277 A JP 551277A JP S5390885 A JPS5390885 A JP S5390885A
- Authority
- JP
- Japan
- Prior art keywords
- mis transistor
- manufacture
- semiconductor device
- device containing
- integrated semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To secure such constitution that the source and drain regions are connecting to the substrate in terms of the bottom surface position via the insulator layer and to decrease the PN junction capacity occurring between the substrate and these regions. Thus, the operation of MIS transistor can be stabilized without increasing the size of the device.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52005512A JPS5938738B2 (en) | 1977-01-21 | 1977-01-21 | Integrated semiconductor device including MIS transistor and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52005512A JPS5938738B2 (en) | 1977-01-21 | 1977-01-21 | Integrated semiconductor device including MIS transistor and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5390885A true JPS5390885A (en) | 1978-08-10 |
JPS5938738B2 JPS5938738B2 (en) | 1984-09-19 |
Family
ID=11613234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52005512A Expired JPS5938738B2 (en) | 1977-01-21 | 1977-01-21 | Integrated semiconductor device including MIS transistor and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5938738B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55129108U (en) * | 1979-03-09 | 1980-09-12 | ||
JPS5637664A (en) * | 1979-09-05 | 1981-04-11 | Mitsubishi Electric Corp | Semiconductor device |
JPS5694670A (en) * | 1979-12-27 | 1981-07-31 | Fujitsu Ltd | Complementary type mis semiconductor device |
JPS5739579A (en) * | 1980-08-20 | 1982-03-04 | Toshiba Corp | Mos semiconductor device and manufacture thereof |
JPS6372164A (en) * | 1986-08-14 | 1988-04-01 | Yokogawa Hewlett Packard Ltd | Manufacture of improved type integrated circuit |
-
1977
- 1977-01-21 JP JP52005512A patent/JPS5938738B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55129108U (en) * | 1979-03-09 | 1980-09-12 | ||
JPS5854249Y2 (en) * | 1979-03-09 | 1983-12-10 | カルソニックカンセイ株式会社 | Defrosting device for automotive air conditioners |
JPS5637664A (en) * | 1979-09-05 | 1981-04-11 | Mitsubishi Electric Corp | Semiconductor device |
JPS5694670A (en) * | 1979-12-27 | 1981-07-31 | Fujitsu Ltd | Complementary type mis semiconductor device |
JPS5739579A (en) * | 1980-08-20 | 1982-03-04 | Toshiba Corp | Mos semiconductor device and manufacture thereof |
JPS6372164A (en) * | 1986-08-14 | 1988-04-01 | Yokogawa Hewlett Packard Ltd | Manufacture of improved type integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS5938738B2 (en) | 1984-09-19 |
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