Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric CorpfiledCriticalMitsubishi Electric Corp
Priority to JP11750476ApriorityCriticalpatent/JPS5342570A/en
Publication of JPS5342570ApublicationCriticalpatent/JPS5342570A/en
PURPOSE: To improve the load characteristics and the scale of integration of MOS type elements by providing a layer of conductivity type opposite from that of a semiconductor substrate within the channel regions between source and drain directly under gate insulation film.
COPYRIGHT: (C)1978,JPO&Japio
JP11750476A1976-09-291976-09-29Mos type semiconductor device
PendingJPS5342570A
(en)