JPS57199251A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57199251A
JPS57199251A JP8523481A JP8523481A JPS57199251A JP S57199251 A JPS57199251 A JP S57199251A JP 8523481 A JP8523481 A JP 8523481A JP 8523481 A JP8523481 A JP 8523481A JP S57199251 A JPS57199251 A JP S57199251A
Authority
JP
Japan
Prior art keywords
type
region
substrate
potential
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8523481A
Other languages
Japanese (ja)
Other versions
JPS634715B2 (en
Inventor
Makoto Tachiki
Yasutaka Horiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8523481A priority Critical patent/JPS57199251A/en
Publication of JPS57199251A publication Critical patent/JPS57199251A/en
Publication of JPS634715B2 publication Critical patent/JPS634715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To supply a potential to a substrate without additional manufacturing process by a method wherein a base region which has the same type of conductivity as the substrate is formed on an epitaxial layer and netal electrodes are formed on the base region and the potential is to those electrodes. CONSTITUTION:After a buried N<+> type collector region 2 of the first N-P-N transistor 3 and a buried N<+> type collector region 9 of the second N-P-N transistor 8 are formed on a P type semiconductor substrat 1, an N<-> type epitaxial layer 22 is formed in a region 27. And grooves which reach the substrate 1 are provided to the main surface 20 and dielectric regions 15-18 are formed. Then a P type base region 11 of the transistor 8 and a P type region 23 are formed. And N<+> type emitter regions 6 and 12, N<+> type collector electrode diffusion regions 7 and 13 and on N<+> type region 24 are formed. Then metal electrodes 25 and 26 are formed on the regions 23 and 24. When a specified potential is given to the electrodes 25 and 26, the potential is given to the substrate 1.
JP8523481A 1981-06-01 1981-06-01 Semiconductor device Granted JPS57199251A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8523481A JPS57199251A (en) 1981-06-01 1981-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8523481A JPS57199251A (en) 1981-06-01 1981-06-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57199251A true JPS57199251A (en) 1982-12-07
JPS634715B2 JPS634715B2 (en) 1988-01-30

Family

ID=13852866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8523481A Granted JPS57199251A (en) 1981-06-01 1981-06-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57199251A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951102A (en) * 1988-08-24 1990-08-21 Harris Corporation Trench gate VCMOS
US5032529A (en) * 1988-08-24 1991-07-16 Harris Corporation Trench gate VCMOS method of manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951102A (en) * 1988-08-24 1990-08-21 Harris Corporation Trench gate VCMOS
US5032529A (en) * 1988-08-24 1991-07-16 Harris Corporation Trench gate VCMOS method of manufacture

Also Published As

Publication number Publication date
JPS634715B2 (en) 1988-01-30

Similar Documents

Publication Publication Date Title
KR900000817B1 (en) Semiconductor ic device manufacturing method
JPS5623771A (en) Semiconductor memory
JPS57201070A (en) Semiconductor device
JPS57199251A (en) Semiconductor device
JPS5473585A (en) Gate turn-off thyristor
JPS5691470A (en) Semiconductor
JPS57118669A (en) Multiemitter type npn transistor
JPS57166067A (en) Bias generating unit for substrate
TW344108B (en) A bipolar transistor and method of manufacturing thereof
JPS5658258A (en) Semiconductor integrated circuit
JPS56126960A (en) Manufacture of semiconductor device
JPS5780768A (en) Semiconductor device
JPS522180A (en) Method of fabricating mos semiconductor integrated circuit
JPS57126162A (en) Semiconductor device
JPS55113376A (en) Manufacturing method of semiconductor device
JPS5578568A (en) Manufacture of semiconductor device
JPS5496975A (en) Semiconductor device
JPS5346287A (en) Production of semiconductor integrated circuit
JPS54142080A (en) Semiconductor device
JPS5493967A (en) Production of gallium arsenide semiconductor device
JPS6442836A (en) Manufacture of semiconductor device
JPS5234675A (en) Manufacturing process of semiconductor device
JPS5522835A (en) Manufacturing of transistor
JPS56130964A (en) Integrated circuit device
JPS5771161A (en) Semiconductor junction capacity device