JPS6449251A - Manufacture of groove-shaped capacitor - Google Patents

Manufacture of groove-shaped capacitor

Info

Publication number
JPS6449251A
JPS6449251A JP62206740A JP20674087A JPS6449251A JP S6449251 A JPS6449251 A JP S6449251A JP 62206740 A JP62206740 A JP 62206740A JP 20674087 A JP20674087 A JP 20674087A JP S6449251 A JPS6449251 A JP S6449251A
Authority
JP
Japan
Prior art keywords
groove
silicon
film
substrate
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62206740A
Other languages
Japanese (ja)
Other versions
JP2794565B2 (en
Inventor
Kenji Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62206740A priority Critical patent/JP2794565B2/en
Publication of JPS6449251A publication Critical patent/JPS6449251A/en
Application granted granted Critical
Publication of JP2794565B2 publication Critical patent/JP2794565B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Abstract

PURPOSE:To obtain a groove-shaped capacitor of high breakdown strength by a method wherein a part other than an inner wall part inside a groove in a silicon substrate is oxidized selectively so as to form a second silicon oxide film and a silicon nitride film, while a first silicon oxide film and the second silicon oxide film are removed in order to easily form a rounded part at an edge part of an opening of the groove. CONSTITUTION:After a laminated film composed of a first silicon oxide film 6 and a silicon nitride film 7 has been formed on a silicon substrate 1 having a groove, the silicon film 7 and the silicon film 6 which have been formed in parts other than an inner wall part of the groove are removed selectively. The substrate 1 including the groove is oxidized, and a second silicon oxide film 8 is formed on the substrate 1 in parts other than the inner wall part of the groove. The silicon film 7 and the silicon films 6, 8 are removed. A dielectric film 9 to be used for a capacitor is formed on the substrate 1 including the inner wall part of the groove. A conductive layer 10 to be used as one electrode for the capacitor is formed on the dielectric film 9. By this setup, a rounded part at an edge part of an opening of the groove can be formed easily; the groove-shaped capacitor of high breakdown strength can thus be obtained.
JP62206740A 1987-08-20 1987-08-20 Manufacturing method of groove type capacitor Expired - Fee Related JP2794565B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62206740A JP2794565B2 (en) 1987-08-20 1987-08-20 Manufacturing method of groove type capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62206740A JP2794565B2 (en) 1987-08-20 1987-08-20 Manufacturing method of groove type capacitor

Publications (2)

Publication Number Publication Date
JPS6449251A true JPS6449251A (en) 1989-02-23
JP2794565B2 JP2794565B2 (en) 1998-09-10

Family

ID=16528317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62206740A Expired - Fee Related JP2794565B2 (en) 1987-08-20 1987-08-20 Manufacturing method of groove type capacitor

Country Status (1)

Country Link
JP (1) JP2794565B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007144199A (en) * 2006-12-18 2007-06-14 Atsugi Color Genzosho:Kk Sleep-time snore preventing device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4244456B2 (en) 1999-08-04 2009-03-25 株式会社デンソー Manufacturing method of semiconductor device, manufacturing method of insulated gate bipolar transistor, and insulated gate bipolar transistor
ITMI20010039A1 (en) 2000-01-14 2002-07-11 Denso Corp SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING ITSELF
US6864532B2 (en) 2000-01-14 2005-03-08 Denso Corporation Semiconductor device and method for manufacturing the same
JP4200626B2 (en) 2000-02-28 2008-12-24 株式会社デンソー Method for manufacturing insulated gate type power device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007144199A (en) * 2006-12-18 2007-06-14 Atsugi Color Genzosho:Kk Sleep-time snore preventing device

Also Published As

Publication number Publication date
JP2794565B2 (en) 1998-09-10

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees