JPS6472551A - Manufacture of trench capacitor - Google Patents

Manufacture of trench capacitor

Info

Publication number
JPS6472551A
JPS6472551A JP62228252A JP22825287A JPS6472551A JP S6472551 A JPS6472551 A JP S6472551A JP 62228252 A JP62228252 A JP 62228252A JP 22825287 A JP22825287 A JP 22825287A JP S6472551 A JPS6472551 A JP S6472551A
Authority
JP
Japan
Prior art keywords
trench
layer
substrate
deposited
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62228252A
Other languages
Japanese (ja)
Other versions
JPH0575184B2 (en
Inventor
Toshihiko Usu
Seiichi Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62228252A priority Critical patent/JPS6472551A/en
Publication of JPS6472551A publication Critical patent/JPS6472551A/en
Publication of JPH0575184B2 publication Critical patent/JPH0575184B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To easily increase the radius of curvature of the corner of a trench under stable conditions and to improve breakdown strength and reliability by forming an impurity layer in the trench and an oxide film layer on its surface by oxidizing an amorphous silicon or the like deposited in the trench and a part of a substrate, and removing the oxide layer to form an insulating film. CONSTITUTION:A trench 1a is first formed on a silicon substrate 1, and an impurity-doped amorphous silicon or polysilicon 7 is then deposited on the surface of the substrate 1 including the interior of the trench 1a. Then, the amorphous silicon or polysilicon 7 and the part of the substrate 1 are oxidized to form an impurity layer 4 therein and an oxide layer 8 on its surface. Thereafter, after the layer 8 is removed by etching, an insulating film 5 is formed on the surface of the layer 4, and an electrode film 6 is deposited on the film 5. Thus, the radius of curvature of the corner of the trench can be increased under stable conditions, thereby improving its breakdown strength and reliability.
JP62228252A 1987-09-14 1987-09-14 Manufacture of trench capacitor Granted JPS6472551A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62228252A JPS6472551A (en) 1987-09-14 1987-09-14 Manufacture of trench capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62228252A JPS6472551A (en) 1987-09-14 1987-09-14 Manufacture of trench capacitor

Publications (2)

Publication Number Publication Date
JPS6472551A true JPS6472551A (en) 1989-03-17
JPH0575184B2 JPH0575184B2 (en) 1993-10-20

Family

ID=16873554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62228252A Granted JPS6472551A (en) 1987-09-14 1987-09-14 Manufacture of trench capacitor

Country Status (1)

Country Link
JP (1) JPS6472551A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1150349A2 (en) * 2000-04-27 2001-10-31 Infineon Technologies North America Corp. Process for reduction of orientation-dependent oxidation in trench structures and semiconductor memory device produced thereby
WO2001095391A1 (en) * 2000-06-02 2001-12-13 Infineon Technologies North America Corp. Self-limiting polysilicon buffered locos for dram trench capacitor collar
JP2003095554A (en) * 2001-09-26 2003-04-03 Toshiba Elevator Co Ltd Safety device on elevator car
US7504299B2 (en) 2004-01-30 2009-03-17 International Business Machines Corporation Folded node trench capacitor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4244456B2 (en) 1999-08-04 2009-03-25 株式会社デンソー Manufacturing method of semiconductor device, manufacturing method of insulated gate bipolar transistor, and insulated gate bipolar transistor
ITMI20010039A1 (en) 2000-01-14 2002-07-11 Denso Corp SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING ITSELF
US6864532B2 (en) 2000-01-14 2005-03-08 Denso Corporation Semiconductor device and method for manufacturing the same
JP4200626B2 (en) 2000-02-28 2008-12-24 株式会社デンソー Method for manufacturing insulated gate type power device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223153A (en) * 1984-04-19 1985-11-07 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device with mis type capacitor and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223153A (en) * 1984-04-19 1985-11-07 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device with mis type capacitor and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1150349A2 (en) * 2000-04-27 2001-10-31 Infineon Technologies North America Corp. Process for reduction of orientation-dependent oxidation in trench structures and semiconductor memory device produced thereby
WO2001095391A1 (en) * 2000-06-02 2001-12-13 Infineon Technologies North America Corp. Self-limiting polysilicon buffered locos for dram trench capacitor collar
JP2003095554A (en) * 2001-09-26 2003-04-03 Toshiba Elevator Co Ltd Safety device on elevator car
US7504299B2 (en) 2004-01-30 2009-03-17 International Business Machines Corporation Folded node trench capacitor

Also Published As

Publication number Publication date
JPH0575184B2 (en) 1993-10-20

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees