JPS6472551A - Manufacture of trench capacitor - Google Patents
Manufacture of trench capacitorInfo
- Publication number
- JPS6472551A JPS6472551A JP62228252A JP22825287A JPS6472551A JP S6472551 A JPS6472551 A JP S6472551A JP 62228252 A JP62228252 A JP 62228252A JP 22825287 A JP22825287 A JP 22825287A JP S6472551 A JPS6472551 A JP S6472551A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- layer
- substrate
- deposited
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To easily increase the radius of curvature of the corner of a trench under stable conditions and to improve breakdown strength and reliability by forming an impurity layer in the trench and an oxide film layer on its surface by oxidizing an amorphous silicon or the like deposited in the trench and a part of a substrate, and removing the oxide layer to form an insulating film. CONSTITUTION:A trench 1a is first formed on a silicon substrate 1, and an impurity-doped amorphous silicon or polysilicon 7 is then deposited on the surface of the substrate 1 including the interior of the trench 1a. Then, the amorphous silicon or polysilicon 7 and the part of the substrate 1 are oxidized to form an impurity layer 4 therein and an oxide layer 8 on its surface. Thereafter, after the layer 8 is removed by etching, an insulating film 5 is formed on the surface of the layer 4, and an electrode film 6 is deposited on the film 5. Thus, the radius of curvature of the corner of the trench can be increased under stable conditions, thereby improving its breakdown strength and reliability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228252A JPS6472551A (en) | 1987-09-14 | 1987-09-14 | Manufacture of trench capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228252A JPS6472551A (en) | 1987-09-14 | 1987-09-14 | Manufacture of trench capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6472551A true JPS6472551A (en) | 1989-03-17 |
JPH0575184B2 JPH0575184B2 (en) | 1993-10-20 |
Family
ID=16873554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62228252A Granted JPS6472551A (en) | 1987-09-14 | 1987-09-14 | Manufacture of trench capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6472551A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1150349A2 (en) * | 2000-04-27 | 2001-10-31 | Infineon Technologies North America Corp. | Process for reduction of orientation-dependent oxidation in trench structures and semiconductor memory device produced thereby |
WO2001095391A1 (en) * | 2000-06-02 | 2001-12-13 | Infineon Technologies North America Corp. | Self-limiting polysilicon buffered locos for dram trench capacitor collar |
JP2003095554A (en) * | 2001-09-26 | 2003-04-03 | Toshiba Elevator Co Ltd | Safety device on elevator car |
US7504299B2 (en) | 2004-01-30 | 2009-03-17 | International Business Machines Corporation | Folded node trench capacitor |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4244456B2 (en) | 1999-08-04 | 2009-03-25 | 株式会社デンソー | Manufacturing method of semiconductor device, manufacturing method of insulated gate bipolar transistor, and insulated gate bipolar transistor |
ITMI20010039A1 (en) | 2000-01-14 | 2002-07-11 | Denso Corp | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING ITSELF |
US6864532B2 (en) | 2000-01-14 | 2005-03-08 | Denso Corporation | Semiconductor device and method for manufacturing the same |
JP4200626B2 (en) | 2000-02-28 | 2008-12-24 | 株式会社デンソー | Method for manufacturing insulated gate type power device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60223153A (en) * | 1984-04-19 | 1985-11-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device with mis type capacitor and manufacture thereof |
-
1987
- 1987-09-14 JP JP62228252A patent/JPS6472551A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60223153A (en) * | 1984-04-19 | 1985-11-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device with mis type capacitor and manufacture thereof |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1150349A2 (en) * | 2000-04-27 | 2001-10-31 | Infineon Technologies North America Corp. | Process for reduction of orientation-dependent oxidation in trench structures and semiconductor memory device produced thereby |
WO2001095391A1 (en) * | 2000-06-02 | 2001-12-13 | Infineon Technologies North America Corp. | Self-limiting polysilicon buffered locos for dram trench capacitor collar |
JP2003095554A (en) * | 2001-09-26 | 2003-04-03 | Toshiba Elevator Co Ltd | Safety device on elevator car |
US7504299B2 (en) | 2004-01-30 | 2009-03-17 | International Business Machines Corporation | Folded node trench capacitor |
Also Published As
Publication number | Publication date |
---|---|
JPH0575184B2 (en) | 1993-10-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |