JPS6411370A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6411370A
JPS6411370A JP16751787A JP16751787A JPS6411370A JP S6411370 A JPS6411370 A JP S6411370A JP 16751787 A JP16751787 A JP 16751787A JP 16751787 A JP16751787 A JP 16751787A JP S6411370 A JPS6411370 A JP S6411370A
Authority
JP
Japan
Prior art keywords
film
silicon oxide
silicon
silicon nitride
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16751787A
Other languages
Japanese (ja)
Inventor
Hiroshi Ishihara
Kenichi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16751787A priority Critical patent/JPS6411370A/en
Publication of JPS6411370A publication Critical patent/JPS6411370A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a silicon nitride film by a relatively simple process and to obtain high dielectric breakdown strength by forming an interlayer insulating film in a 3-layer structure of silicon oxide/silicon nitride/silicon oxide. CONSTITUTION:A phosphorus impurity-doped first polycrystalline silicon film 5 is vapor grown on a semiconductor substrate 1, and its surface is thermally oxidized to form a bottom silicon oxide film 6. Then, a silicon nitride film 7 is formed, set in a wet atmosphere, and a silicon oxide film 8 is formed on the exposed surface. A silicon oxide film is also formed on the film 7 during the oxidation, a top silicon oxide film 8 is formed, and an insulating film made of a 3-layer structure of the film 6/the film 7/the film 8 is formed on the film 6 molded in a floating gate shape. A semiconductor device having high breakdown strength for both applied positive and negative voltages is obtained with high reliability.
JP16751787A 1987-07-03 1987-07-03 Semiconductor device Pending JPS6411370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16751787A JPS6411370A (en) 1987-07-03 1987-07-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16751787A JPS6411370A (en) 1987-07-03 1987-07-03 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6411370A true JPS6411370A (en) 1989-01-13

Family

ID=15851156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16751787A Pending JPS6411370A (en) 1987-07-03 1987-07-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6411370A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02230775A (en) * 1989-03-02 1990-09-13 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02230775A (en) * 1989-03-02 1990-09-13 Mitsubishi Electric Corp Manufacture of semiconductor device

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