JPS6411370A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6411370A JPS6411370A JP16751787A JP16751787A JPS6411370A JP S6411370 A JPS6411370 A JP S6411370A JP 16751787 A JP16751787 A JP 16751787A JP 16751787 A JP16751787 A JP 16751787A JP S6411370 A JPS6411370 A JP S6411370A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon oxide
- silicon
- silicon nitride
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form a silicon nitride film by a relatively simple process and to obtain high dielectric breakdown strength by forming an interlayer insulating film in a 3-layer structure of silicon oxide/silicon nitride/silicon oxide. CONSTITUTION:A phosphorus impurity-doped first polycrystalline silicon film 5 is vapor grown on a semiconductor substrate 1, and its surface is thermally oxidized to form a bottom silicon oxide film 6. Then, a silicon nitride film 7 is formed, set in a wet atmosphere, and a silicon oxide film 8 is formed on the exposed surface. A silicon oxide film is also formed on the film 7 during the oxidation, a top silicon oxide film 8 is formed, and an insulating film made of a 3-layer structure of the film 6/the film 7/the film 8 is formed on the film 6 molded in a floating gate shape. A semiconductor device having high breakdown strength for both applied positive and negative voltages is obtained with high reliability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16751787A JPS6411370A (en) | 1987-07-03 | 1987-07-03 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16751787A JPS6411370A (en) | 1987-07-03 | 1987-07-03 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6411370A true JPS6411370A (en) | 1989-01-13 |
Family
ID=15851156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16751787A Pending JPS6411370A (en) | 1987-07-03 | 1987-07-03 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6411370A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02230775A (en) * | 1989-03-02 | 1990-09-13 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1987
- 1987-07-03 JP JP16751787A patent/JPS6411370A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02230775A (en) * | 1989-03-02 | 1990-09-13 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
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