JPS5626476A - Junction type field-effect transistor and the manufacturing process - Google Patents
Junction type field-effect transistor and the manufacturing processInfo
- Publication number
- JPS5626476A JPS5626476A JP10304379A JP10304379A JPS5626476A JP S5626476 A JPS5626476 A JP S5626476A JP 10304379 A JP10304379 A JP 10304379A JP 10304379 A JP10304379 A JP 10304379A JP S5626476 A JPS5626476 A JP S5626476A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- layers
- type
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 239000012528 membrane Substances 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910021426 porous silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain a J-FET of satisfactory high frequency characteristics by reducing a joint's sectional area so as to lower a gate's joining capacity, by insulating approximately half of a joint between a channel region and a semiconductor substrate occupying a major portion of the gate joining capacity. CONSTITUTION:An Si3N4 membrane 12 is attached onto the surface of a P type Si substrate 11, all the formed regions such as a source, a drain and a gate, etc. are removed, the substrate 11 is selectively turned into porous Si layers 13 and 14 by being immersed in aqueous hydrofluoric acid solution and anodized, and by being heat-treated, these layers are converted into oxide layers 15 and 16. And then, the membrane 12 is removed, an N type impurity ion is driven into the substrate exposed between the layers 15 and 16 so as to form a shallow N type layer 17, and the heights of the layers 15 and 16 are lowered by etching. And then, the surface of the projecting layer 17 is covered with an oxide membrane 18 and provided with a hole, and a source region 19 and a drain region 20 of N type are dispersingly formed on the side surface of the layer 17. And then, a P type gate region 20 is provided in the layer 17 adjoining these regions, and all the electrodes 22 through 24 of source, drain and gate are attached onto respective regions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10304379A JPS5626476A (en) | 1979-08-13 | 1979-08-13 | Junction type field-effect transistor and the manufacturing process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10304379A JPS5626476A (en) | 1979-08-13 | 1979-08-13 | Junction type field-effect transistor and the manufacturing process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5626476A true JPS5626476A (en) | 1981-03-14 |
Family
ID=14343629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10304379A Pending JPS5626476A (en) | 1979-08-13 | 1979-08-13 | Junction type field-effect transistor and the manufacturing process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5626476A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6332397A (en) * | 1986-07-26 | 1988-02-12 | 三菱原子燃料株式会社 | Method of processing waste liquor utilizing organism system substance |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419367A (en) * | 1977-07-13 | 1979-02-14 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
-
1979
- 1979-08-13 JP JP10304379A patent/JPS5626476A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419367A (en) * | 1977-07-13 | 1979-02-14 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6332397A (en) * | 1986-07-26 | 1988-02-12 | 三菱原子燃料株式会社 | Method of processing waste liquor utilizing organism system substance |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0052989A3 (en) | Method of fabricating a semiconductor device | |
EP0241059A3 (en) | Method for manufacturing a power mos transistor | |
EP0148595A3 (en) | Method of fabricating mesa mosfet using overhang mask and resulting structure | |
JPS57109367A (en) | Semiconductor memory device | |
JPS5626476A (en) | Junction type field-effect transistor and the manufacturing process | |
JPS55157241A (en) | Manufacture of semiconductor device | |
JPS57201078A (en) | Semiconductor and its manufacture | |
JPS5575238A (en) | Method of fabricating semiconductor device | |
JPS56130970A (en) | Manufacture of semiconductor device | |
JPS6472567A (en) | Manufacture of semiconductor device | |
JPS5630768A (en) | Manufacture of mnos type semiconductor device | |
JPS55154769A (en) | Manufacture of semiconductor device | |
JPS5734370A (en) | Manufacture of junction type field-effect transistor | |
JPS54117690A (en) | Production of semiconductor device | |
JPS56146281A (en) | Manufacture of semiconductor integrated circuit | |
JPS5748248A (en) | Manufacture of semiconductor device | |
JPS5630763A (en) | Semiconductor device | |
JPS63174464U (en) | ||
JPS6465875A (en) | Thin film transistor and manufacture thereof | |
JPS5737838A (en) | Manufacture of semiconductor device | |
JPS6260265A (en) | Manufacture of semiconductor device | |
JPS6469057A (en) | Semiconductor device and manufacture thereof | |
JPS5591857A (en) | Manufacture of semiconductor device | |
JPS61288467A (en) | Semiconductor device and manufacture thereof | |
JPS5670669A (en) | Longitudinal semiconductor device |