JPS6415964A - Manufacture of semiconductor integrated circuit device - Google Patents
Manufacture of semiconductor integrated circuit deviceInfo
- Publication number
- JPS6415964A JPS6415964A JP62172139A JP17213987A JPS6415964A JP S6415964 A JPS6415964 A JP S6415964A JP 62172139 A JP62172139 A JP 62172139A JP 17213987 A JP17213987 A JP 17213987A JP S6415964 A JPS6415964 A JP S6415964A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- electrode
- film
- oxide film
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To prevent the leak or short-circuiting between a capacitor electrode and a gate electrode, by forming a capacitor electrode in a capacitor forming region, after a specific number of insulating films among a plurality of insulating films formed on the main surface of a substrate are eliminated in the capacitor forming region. CONSTITUTION:On a silicon substrate 1, are formed a two-layer film composed of a nitride film 3 as an upper layer, and an oxide film 2 as a lower layer. The nitride film 3 is eliminated in a capacitor forming region. A capacitor electrode 4 of polycrystal silicon is filmed in the manner in which the side surface of the electrode comes into contact with the side surface of the nitride film 3, and an insulating oxide film 5 between the gate electrode and the capacitor electrode is grown by thermal oxidation. A silicon substrate 7 in a gate forming region is exposed by etching, and a gate oxide film 6 is grown on the surface by thermal oxidation. A capacitor insulating film is a single-layer film composed of only the oxide film 2, and a sufficient thickness of insulating oxide film can be obtained at the junction part 8 between the capacitor insulating film and the gate oxide film 6. At the time of forming a gate electrode 9 of polycrystal silicon, the leak of short-circuiting between the capacitor electrode 4 and the gate electrode 9, via the junction part 8, can be sufficiently prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62172139A JPS6415964A (en) | 1987-07-09 | 1987-07-09 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62172139A JPS6415964A (en) | 1987-07-09 | 1987-07-09 | Manufacture of semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6415964A true JPS6415964A (en) | 1989-01-19 |
Family
ID=15936288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62172139A Pending JPS6415964A (en) | 1987-07-09 | 1987-07-09 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6415964A (en) |
-
1987
- 1987-07-09 JP JP62172139A patent/JPS6415964A/en active Pending
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