JPS5448184A - Electrode wiring forming method for semiconductor device - Google Patents

Electrode wiring forming method for semiconductor device

Info

Publication number
JPS5448184A
JPS5448184A JP11538177A JP11538177A JPS5448184A JP S5448184 A JPS5448184 A JP S5448184A JP 11538177 A JP11538177 A JP 11538177A JP 11538177 A JP11538177 A JP 11538177A JP S5448184 A JPS5448184 A JP S5448184A
Authority
JP
Japan
Prior art keywords
film
alumina
wirings
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11538177A
Other languages
Japanese (ja)
Inventor
Koichi Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11538177A priority Critical patent/JPS5448184A/en
Publication of JPS5448184A publication Critical patent/JPS5448184A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To avoid the defective dielectric strength and the short between the electrode wirings by changing the upper and side surfaces of the Al wiring via the Al wiring via the anode oxidation method into the alumina and furthermore changing the Si layer between wirings into the silicon dioxide of the insulator.
CONSTITUTION: Opening 3 is provided to insulating film 2 which covers one main surface of silicon substrate 1 to which the necessary impurity dope layer is formed. Silicon thin film 4 is formed on substrate 1, and aluminum thin film 5 is formed on film 4. Then film 5 is removed through the selective etching, and the anode oxidizing process is given to substrate 1. As a result, the periphery of film 5 is changed to alumina 7, and film 4 between aluminum wirings is changed to silicon oxide film 8. After this, alumina 7 is removed selectively through etching to form the electrode wiring for the semiconductor device
COPYRIGHT: (C)1979,JPO&Japio
JP11538177A 1977-09-24 1977-09-24 Electrode wiring forming method for semiconductor device Pending JPS5448184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11538177A JPS5448184A (en) 1977-09-24 1977-09-24 Electrode wiring forming method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11538177A JPS5448184A (en) 1977-09-24 1977-09-24 Electrode wiring forming method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5448184A true JPS5448184A (en) 1979-04-16

Family

ID=14661113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11538177A Pending JPS5448184A (en) 1977-09-24 1977-09-24 Electrode wiring forming method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5448184A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181075A (en) * 1983-03-31 1984-10-15 Agency Of Ind Science & Technol Manufacture of josephson integrated circuit device
JPH01298740A (en) * 1988-05-27 1989-12-01 Fujitsu Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181075A (en) * 1983-03-31 1984-10-15 Agency Of Ind Science & Technol Manufacture of josephson integrated circuit device
JPH01298740A (en) * 1988-05-27 1989-12-01 Fujitsu Ltd Semiconductor device

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