JPS55102240A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55102240A JPS55102240A JP895179A JP895179A JPS55102240A JP S55102240 A JPS55102240 A JP S55102240A JP 895179 A JP895179 A JP 895179A JP 895179 A JP895179 A JP 895179A JP S55102240 A JPS55102240 A JP S55102240A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- poly
- layers
- oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain an Si-gate-type MOSFET at a high yield rate by eliminating the problems in forming an SiO2 mask for Si3N4 film etching in the conventional manufacturing method and the cracking in the Si3N4 film at the time of oxidation.
CONSTITUTION: Opening holes 104 and 105 are made in a gate oxide film 103 in p-type Si substrate 101, a poly Si 106 of phosphorus dope is stacked, oxidation is performed, thereby an SiO2 film 107 is made. Then, Si3N4 films 109W111 are fromed by covering with the Si3N4 film, and performing selective etching. Thereafter, the poly Si 106 is transformed into SiO2 112 by wet oxidation, and mutually separated poly Si layers 113 are formed. During this period, n-layers 116 and 117 are formed by diffusing phosphorus from poly Si 113 and 115 through holes 104 and 105, and shallow n-layers 118 and 119 are formed through the gate film. Then, the Si3N4 film 110 is selectively removed. After the poly Si 114 is transformed into SiO2 120, the Si3N4 films 109 and 111 are removed, the SiO2 film 107 is etched out, Al wirings 130 and 131 are provided, thereby the work is accomplished. In this method, the conventional defects can be eliminated, and the device having no wiring breakdown can be obtained at a high yield rate.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP895179A JPS55102240A (en) | 1979-01-29 | 1979-01-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP895179A JPS55102240A (en) | 1979-01-29 | 1979-01-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55102240A true JPS55102240A (en) | 1980-08-05 |
Family
ID=11706970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP895179A Pending JPS55102240A (en) | 1979-01-29 | 1979-01-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55102240A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02112237A (en) * | 1988-10-21 | 1990-04-24 | Matsushita Electron Corp | Manufacture of semiconductor device |
-
1979
- 1979-01-29 JP JP895179A patent/JPS55102240A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02112237A (en) * | 1988-10-21 | 1990-04-24 | Matsushita Electron Corp | Manufacture of semiconductor device |
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