JPS56164579A - Manufacture of mos type semiconductor device - Google Patents

Manufacture of mos type semiconductor device

Info

Publication number
JPS56164579A
JPS56164579A JP6637580A JP6637580A JPS56164579A JP S56164579 A JPS56164579 A JP S56164579A JP 6637580 A JP6637580 A JP 6637580A JP 6637580 A JP6637580 A JP 6637580A JP S56164579 A JPS56164579 A JP S56164579A
Authority
JP
Japan
Prior art keywords
layer
oxide film
type
psg layer
covered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6637580A
Other languages
Japanese (ja)
Inventor
Shokichi Yoshitome
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP6637580A priority Critical patent/JPS56164579A/en
Publication of JPS56164579A publication Critical patent/JPS56164579A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent short-circuiting between a gate electrode, and a source and a drain of the MOS type semiconductor device by a method wherein diffusion layers are formed applying an Si3N4 mask and is covered with an SiO2 film, the mask is removed and a ate oxide film, the polycrystalline Si electrode are provided, and is covered with a PSG layer and heat-treatment is performed. CONSTITUTION:A field oxide film 22, the gate oxide film 23 and an Si3N4 film 24 are laminated on a P type Si substrate 21 and openings are formed therein, and layers 25 are formed by As ion implantation. Selective oxidation 27 are performed to form N type layers 28. The films 23, 24 are removed and the gate oxide film 29, the polycrystalline Si electrode 30 are provided selectively, and is covered with a PSG layer 31. Heat-treatment is performed to remove step parts and P is made to diffuse to form N type layer 32. Openings 33, 34 are formed in the PSG layer 31, and Al wirings 35 are provided. By this constitution, because etching speed of the PSG layer 31 and the SiO2 layer 27 differ extremely, even when the PSG layer 31 is excessibely etched an opening is formed and an Al wiring 33 is applied, the N type layer 32 and the gate electrode 30 are not short-circuited. Moreover because the gate electrode 30 and the opening 33 are formed by self-alignment, integration can be enchanced.
JP6637580A 1980-05-21 1980-05-21 Manufacture of mos type semiconductor device Pending JPS56164579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6637580A JPS56164579A (en) 1980-05-21 1980-05-21 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6637580A JPS56164579A (en) 1980-05-21 1980-05-21 Manufacture of mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS56164579A true JPS56164579A (en) 1981-12-17

Family

ID=13314011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6637580A Pending JPS56164579A (en) 1980-05-21 1980-05-21 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS56164579A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50118685A (en) * 1974-03-01 1975-09-17
JPS51127683A (en) * 1975-04-28 1976-11-06 Toshiba Corp Manufacturing process of insulation gate-type electric field transisto r
JPS52131483A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Mis-type semiconductor device
JPS5552270A (en) * 1978-10-11 1980-04-16 Nec Corp Preparation of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50118685A (en) * 1974-03-01 1975-09-17
JPS51127683A (en) * 1975-04-28 1976-11-06 Toshiba Corp Manufacturing process of insulation gate-type electric field transisto r
JPS52131483A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Mis-type semiconductor device
JPS5552270A (en) * 1978-10-11 1980-04-16 Nec Corp Preparation of semiconductor device

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