JPS51127683A - Manufacturing process of insulation gate-type electric field transisto r - Google Patents

Manufacturing process of insulation gate-type electric field transisto r

Info

Publication number
JPS51127683A
JPS51127683A JP5080175A JP5080175A JPS51127683A JP S51127683 A JPS51127683 A JP S51127683A JP 5080175 A JP5080175 A JP 5080175A JP 5080175 A JP5080175 A JP 5080175A JP S51127683 A JPS51127683 A JP S51127683A
Authority
JP
Japan
Prior art keywords
transisto
electric field
manufacturing process
type electric
insulation gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5080175A
Other languages
Japanese (ja)
Other versions
JPS5751748B2 (en
Inventor
Takahiko Moriya
Kei Kirita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5080175A priority Critical patent/JPS51127683A/en
Publication of JPS51127683A publication Critical patent/JPS51127683A/en
Publication of JPS5751748B2 publication Critical patent/JPS5751748B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To prevent incomplete the source-drain PN-contact by making shallow the depth of the area adjacent to the channel zone under the gate to ensure a correct channel control and at the same time by increasing the depth of otehr areas to minimize the resistance at the source-drain zone.
COPYRIGHT: (C)1976,JPO&Japio
JP5080175A 1975-04-28 1975-04-28 Manufacturing process of insulation gate-type electric field transisto r Granted JPS51127683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5080175A JPS51127683A (en) 1975-04-28 1975-04-28 Manufacturing process of insulation gate-type electric field transisto r

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5080175A JPS51127683A (en) 1975-04-28 1975-04-28 Manufacturing process of insulation gate-type electric field transisto r

Publications (2)

Publication Number Publication Date
JPS51127683A true JPS51127683A (en) 1976-11-06
JPS5751748B2 JPS5751748B2 (en) 1982-11-04

Family

ID=12868869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5080175A Granted JPS51127683A (en) 1975-04-28 1975-04-28 Manufacturing process of insulation gate-type electric field transisto r

Country Status (1)

Country Link
JP (1) JPS51127683A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164579A (en) * 1980-05-21 1981-12-17 Oki Electric Ind Co Ltd Manufacture of mos type semiconductor device
JPS58118158A (en) * 1981-12-30 1983-07-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming field effect transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6451306U (en) * 1987-09-24 1989-03-30

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164579A (en) * 1980-05-21 1981-12-17 Oki Electric Ind Co Ltd Manufacture of mos type semiconductor device
JPS58118158A (en) * 1981-12-30 1983-07-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming field effect transistor
JPH045265B2 (en) * 1981-12-30 1992-01-30

Also Published As

Publication number Publication date
JPS5751748B2 (en) 1982-11-04

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