JPS5679472A - Preparing method of mos-type semiconductor device - Google Patents
Preparing method of mos-type semiconductor deviceInfo
- Publication number
- JPS5679472A JPS5679472A JP15637979A JP15637979A JPS5679472A JP S5679472 A JPS5679472 A JP S5679472A JP 15637979 A JP15637979 A JP 15637979A JP 15637979 A JP15637979 A JP 15637979A JP S5679472 A JPS5679472 A JP S5679472A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- poly
- sio2
- mask
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000010276 construction Methods 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain an FET having a high integrated degree by embeding a gate electrode into an insulating layer and setting a poly-silicon or amorphous silicon channel thereon and a source drain at both sides thereof. CONSTITUTION:A poly-silicon 3 is laid on a SiO2 2 on a Si substrate 1. It is oxidized to change to SiO2 32 performing a mask 4. After demasking, it is covered with an oxide film 5 and a N<+> layer 5 is prepared injecting P-ion. Then, the poly- silicon 6 is selectively formed and the P-ion is injected to set the N<+> layer 8, 9 performing a resist mask 7. After removing the mask 7, the LASER is irradiated to activate it. Then, it is covered with SiO2 10 and Al electrodes 111, 112 are made by opening selectively. By this constitution, a smooth construction can be realized with poly-silicon film, thereby being capable of miniaturization and high integration of element without decreasing the reliability. Further, the combination with the conventional construction makes possible to obtain various kinds of devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15637979A JPS5679472A (en) | 1979-12-04 | 1979-12-04 | Preparing method of mos-type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15637979A JPS5679472A (en) | 1979-12-04 | 1979-12-04 | Preparing method of mos-type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5679472A true JPS5679472A (en) | 1981-06-30 |
Family
ID=15626457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15637979A Pending JPS5679472A (en) | 1979-12-04 | 1979-12-04 | Preparing method of mos-type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5679472A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56140662A (en) * | 1980-04-02 | 1981-11-04 | Mitsubishi Electric Corp | Manufacture of field effect semiconductor of insulation gate complementary type |
JPS60160173A (en) * | 1984-01-30 | 1985-08-21 | Sharp Corp | Thin film transistor |
JPH03265143A (en) * | 1990-03-15 | 1991-11-26 | Matsushita Electron Corp | Manufacture of thin film transistor |
JPH0555254A (en) * | 1991-08-27 | 1993-03-05 | Sharp Corp | Thin film transistor and manufacture thereof |
JPH05136169A (en) * | 1992-01-27 | 1993-06-01 | Seiko Epson Corp | Manufacture of thin-film transistor |
-
1979
- 1979-12-04 JP JP15637979A patent/JPS5679472A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56140662A (en) * | 1980-04-02 | 1981-11-04 | Mitsubishi Electric Corp | Manufacture of field effect semiconductor of insulation gate complementary type |
JPH0312475B2 (en) * | 1980-04-02 | 1991-02-20 | Mitsubishi Electric Corp | |
JPS60160173A (en) * | 1984-01-30 | 1985-08-21 | Sharp Corp | Thin film transistor |
JPH03265143A (en) * | 1990-03-15 | 1991-11-26 | Matsushita Electron Corp | Manufacture of thin film transistor |
JPH0555254A (en) * | 1991-08-27 | 1993-03-05 | Sharp Corp | Thin film transistor and manufacture thereof |
JPH05136169A (en) * | 1992-01-27 | 1993-06-01 | Seiko Epson Corp | Manufacture of thin-film transistor |
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