JPS5491086A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5491086A
JPS5491086A JP15800077A JP15800077A JPS5491086A JP S5491086 A JPS5491086 A JP S5491086A JP 15800077 A JP15800077 A JP 15800077A JP 15800077 A JP15800077 A JP 15800077A JP S5491086 A JPS5491086 A JP S5491086A
Authority
JP
Japan
Prior art keywords
film
region
polycrystal
sio
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15800077A
Other languages
Japanese (ja)
Other versions
JPS6040706B2 (en
Inventor
Tadashi Kuragami
Takashi Yamanaka
Shigeru Koshimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP52158000A priority Critical patent/JPS6040706B2/en
Priority to US05/942,729 priority patent/US4268847A/en
Publication of JPS5491086A publication Critical patent/JPS5491086A/en
Priority to US06/192,401 priority patent/US4357747A/en
Publication of JPS6040706B2 publication Critical patent/JPS6040706B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To make the width of a gate region equal to that of a gate electrode by masking a part which becomes a source or drain region with a gate electrode component substance when forming the channel stopper region of a MOS transistor.
CONSTITUTION: On Si substrate 31, SiO2 films 32 are formed to form an insulating separation region between elements. Next, a SiO2 film is formed on substrate 31 and polycrystal Si containing phosphorus is adhered onto it and removed selectively by being photoetched to form gate insulation film 33 and gate electrode 34, On it SiO2 film 35 is formed, on which polycrystal Si film 36 is adhered. Next, polycrystal Si is selectively removed only in the width direction by being photoetched and with SiO2 film 35 left, self-matching type channel stopper region 38 is formed in the width direction of the MOS transistor. Then, polycrystal Si 36 is removed selectively by being photoetched to form gate electrode 40 and gate insulation film 41. Further, this photoresist 39 is used to form self-matching type source region 42 in the length direction of the transistor. In this way,the size for one element can be reduced.
COPYRIGHT: (C)1979,JPO&Japio
JP52158000A 1977-09-16 1977-12-28 Manufacturing method of semiconductor device Expired JPS6040706B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP52158000A JPS6040706B2 (en) 1977-12-28 1977-12-28 Manufacturing method of semiconductor device
US05/942,729 US4268847A (en) 1977-09-16 1978-09-15 Semiconductor device having an insulated gate type field effect transistor and method for producing the same
US06/192,401 US4357747A (en) 1977-09-16 1980-09-30 Method for producing a semiconductor device having an insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52158000A JPS6040706B2 (en) 1977-12-28 1977-12-28 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5491086A true JPS5491086A (en) 1979-07-19
JPS6040706B2 JPS6040706B2 (en) 1985-09-12

Family

ID=15662050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52158000A Expired JPS6040706B2 (en) 1977-09-16 1977-12-28 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6040706B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2552472B2 (en) * 1983-02-08 1985-11-08 Ott Renaud CONSTRUCTIVE SYSTEM USING LOST FORMS, ESPECIALLY INSULATING AND WEAPONS

Also Published As

Publication number Publication date
JPS6040706B2 (en) 1985-09-12

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