JPS5495191A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5495191A
JPS5495191A JP257278A JP257278A JPS5495191A JP S5495191 A JPS5495191 A JP S5495191A JP 257278 A JP257278 A JP 257278A JP 257278 A JP257278 A JP 257278A JP S5495191 A JPS5495191 A JP S5495191A
Authority
JP
Japan
Prior art keywords
film
crystal
sio
poly
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP257278A
Other languages
Japanese (ja)
Inventor
Yoshihiro Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP257278A priority Critical patent/JPS5495191A/en
Publication of JPS5495191A publication Critical patent/JPS5495191A/en
Pending legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To obtain a high-density MOS-type transistor by causing a poly-crystal Si film including impurity to adhere onto a semiconductor substrate and subjecting this film to heat treatment to diffuse impurity and form a diffusion region by the self-matching method and forming a gate oxide film and a gate electrode by the self- matching method.
CONSTITUTION: The laminated film of SiO2 film 8 and Si3N4 film 9 is used as a mask to oxidize Si substrate 7 selectively, thereby forming field SiO2 film 10. Next, the laminated film is removed to grow poly-crystal Si film 11 including impurity, which is a conductive type opposite to substrate 7, throughout the surface, and window 13 is provided on the region surrounded by film 10 to expose a part of substrate 7. After that, heat treatment is performed to not only form gate SiO2 film 14 in window 13 but also convert poly-crystal film 11 to film 15 covered with SiO2 film 16, and simultaneously, impurity in film 11 is diffused to form diffusion region 17. Next, film 18 consisting of Al. poly-crystal Si, etc., which becomes a gate electrode is caused to adhere onto all the surface and is subjected to photo etching, thereby making gate electrode 19.
COPYRIGHT: (C)1979,JPO&Japio
JP257278A 1978-01-13 1978-01-13 Production of semiconductor device Pending JPS5495191A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP257278A JPS5495191A (en) 1978-01-13 1978-01-13 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP257278A JPS5495191A (en) 1978-01-13 1978-01-13 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5495191A true JPS5495191A (en) 1979-07-27

Family

ID=11533076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP257278A Pending JPS5495191A (en) 1978-01-13 1978-01-13 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5495191A (en)

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