JPS5323578A - Production of mos type integrated circuit device - Google Patents
Production of mos type integrated circuit deviceInfo
- Publication number
- JPS5323578A JPS5323578A JP9789676A JP9789676A JPS5323578A JP S5323578 A JPS5323578 A JP S5323578A JP 9789676 A JP9789676 A JP 9789676A JP 9789676 A JP9789676 A JP 9789676A JP S5323578 A JPS5323578 A JP S5323578A
- Authority
- JP
- Japan
- Prior art keywords
- production
- integrated circuit
- circuit device
- mos type
- type integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain source, drain regions having no variations in impurity concentration and increase the film thickness of a field oxide film by removing the source, drain forming regiosn of the oxide film deposited on a semiconductor substrate, growing a polycrystalline Si film on the entire surface and performing diffusion followed by oxidation by using said film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9789676A JPS5323578A (en) | 1976-08-17 | 1976-08-17 | Production of mos type integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9789676A JPS5323578A (en) | 1976-08-17 | 1976-08-17 | Production of mos type integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5323578A true JPS5323578A (en) | 1978-03-04 |
Family
ID=14204498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9789676A Pending JPS5323578A (en) | 1976-08-17 | 1976-08-17 | Production of mos type integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5323578A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002368012A (en) * | 2001-06-06 | 2002-12-20 | Rohm Co Ltd | Forming method of impurity diffusion layer |
-
1976
- 1976-08-17 JP JP9789676A patent/JPS5323578A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002368012A (en) * | 2001-06-06 | 2002-12-20 | Rohm Co Ltd | Forming method of impurity diffusion layer |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Effective date: 20050809 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
A313 | Final decision of rejection without a dissenting response from the applicant |
Effective date: 20051226 Free format text: JAPANESE INTERMEDIATE CODE: A313 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080108 |