JPS5323578A - Production of mos type integrated circuit device - Google Patents

Production of mos type integrated circuit device

Info

Publication number
JPS5323578A
JPS5323578A JP9789676A JP9789676A JPS5323578A JP S5323578 A JPS5323578 A JP S5323578A JP 9789676 A JP9789676 A JP 9789676A JP 9789676 A JP9789676 A JP 9789676A JP S5323578 A JPS5323578 A JP S5323578A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
circuit device
mos type
type integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9789676A
Other languages
Japanese (ja)
Inventor
Yasushi Okuyama
Keiichi Shimakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9789676A priority Critical patent/JPS5323578A/en
Publication of JPS5323578A publication Critical patent/JPS5323578A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain source, drain regions having no variations in impurity concentration and increase the film thickness of a field oxide film by removing the source, drain forming regiosn of the oxide film deposited on a semiconductor substrate, growing a polycrystalline Si film on the entire surface and performing diffusion followed by oxidation by using said film.
JP9789676A 1976-08-17 1976-08-17 Production of mos type integrated circuit device Pending JPS5323578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9789676A JPS5323578A (en) 1976-08-17 1976-08-17 Production of mos type integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9789676A JPS5323578A (en) 1976-08-17 1976-08-17 Production of mos type integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5323578A true JPS5323578A (en) 1978-03-04

Family

ID=14204498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9789676A Pending JPS5323578A (en) 1976-08-17 1976-08-17 Production of mos type integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5323578A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368012A (en) * 2001-06-06 2002-12-20 Rohm Co Ltd Forming method of impurity diffusion layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368012A (en) * 2001-06-06 2002-12-20 Rohm Co Ltd Forming method of impurity diffusion layer

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Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Effective date: 20050809

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A313 Final decision of rejection without a dissenting response from the applicant

Effective date: 20051226

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A02 Decision of refusal

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Effective date: 20080108