JPS5457955A - Production of semiconductor element - Google Patents
Production of semiconductor elementInfo
- Publication number
- JPS5457955A JPS5457955A JP12402577A JP12402577A JPS5457955A JP S5457955 A JPS5457955 A JP S5457955A JP 12402577 A JP12402577 A JP 12402577A JP 12402577 A JP12402577 A JP 12402577A JP S5457955 A JPS5457955 A JP S5457955A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- ions
- heated
- interface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To improve an electrical characteristic by injecting H+ and H+ 2 ions to the interface between a Si substrate and a sticked layer or the substrate side and annealing them.
CONSTITUTION: BSG3 is laminated on SiO2 film 2 on a Si substrate after forming an aperture, and H+ and H+ 2 ions are injected to distribute them to the interface between the substrate and film 2 or the substrate side. Next, they are heated in a neutral atmosphere to form base layer 4. Next, apertures are formed selectively in films 3 and 2 to laminate PSG5, and the substrate is heated in a neutral atmosphere to form emitter layer 6 and collector connection layer 7. By this method, β becomes higher, and the leakage current is lowered with a high dielectric strength, so that the electrical characteristic can be improved
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12402577A JPS6040697B2 (en) | 1977-10-18 | 1977-10-18 | Method for manufacturing semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12402577A JPS6040697B2 (en) | 1977-10-18 | 1977-10-18 | Method for manufacturing semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5457955A true JPS5457955A (en) | 1979-05-10 |
JPS6040697B2 JPS6040697B2 (en) | 1985-09-12 |
Family
ID=14875158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12402577A Expired JPS6040697B2 (en) | 1977-10-18 | 1977-10-18 | Method for manufacturing semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6040697B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5663097A (en) * | 1991-06-21 | 1997-09-02 | Canon Kabushiki Kaisha | Method of fabricating a semiconductor device having an insulating side wall |
-
1977
- 1977-10-18 JP JP12402577A patent/JPS6040697B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5663097A (en) * | 1991-06-21 | 1997-09-02 | Canon Kabushiki Kaisha | Method of fabricating a semiconductor device having an insulating side wall |
Also Published As
Publication number | Publication date |
---|---|
JPS6040697B2 (en) | 1985-09-12 |
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