JPS57202757A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57202757A JPS57202757A JP8865881A JP8865881A JPS57202757A JP S57202757 A JPS57202757 A JP S57202757A JP 8865881 A JP8865881 A JP 8865881A JP 8865881 A JP8865881 A JP 8865881A JP S57202757 A JPS57202757 A JP S57202757A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- film
- insulating film
- layer
- grow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To avoid generation of disconnection or short-circuit of an upper layer metal wiring layer to be provided on a lower layer wiring layer when an interlayer insulating film of a semiconductor device having multilayer wiring structure is to be formed by a method wherein the sides of the first insulating film are made to have the taper type, and the second insulating film is made to grow thereon to form the smooth stepped part. CONSTITUTION:An oxide film 2 is adhered on an Si substrate 1, the wiring layer 3 having the step part with the prescribed size is formed thereon, and the plasma nitride film 4 to constitute the interlayer insulating film is made to grow on the whole surface surrounding the wiring layer thereof. Then taper is formed on the whole surface of the film 4 covering the shoulder parts of the lower layer wiring layer using an ion cylinder, while at this time, narrow grooves 10 are generated in the film 4 along the shoulder parts because of existence of the shoulder parts of wiring layer. Therefore the plasma nitride film 5 is made to grow again on the whole surface, and the grooves 10 are buried at the same time to form the smooth interlayer insulating film on the whole. Accordingly generation of disconnection or short-circuit of the upper layer wiring layer to be provided thereon is prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8865881A JPS57202757A (en) | 1981-06-09 | 1981-06-09 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8865881A JPS57202757A (en) | 1981-06-09 | 1981-06-09 | Semiconductor device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57202757A true JPS57202757A (en) | 1982-12-11 |
| JPS639747B2 JPS639747B2 (en) | 1988-03-01 |
Family
ID=13948914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8865881A Granted JPS57202757A (en) | 1981-06-09 | 1981-06-09 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57202757A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52156375A (en) * | 1976-06-22 | 1977-12-26 | Nippon Electric Co | Method of producing multilayer circuit substrate |
| JPS53108389A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Manufacture for semiconductor device |
| JPS54142981A (en) * | 1978-04-27 | 1979-11-07 | Matsushita Electric Ind Co Ltd | Manufacture of insulation gate type semiconductor device |
-
1981
- 1981-06-09 JP JP8865881A patent/JPS57202757A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52156375A (en) * | 1976-06-22 | 1977-12-26 | Nippon Electric Co | Method of producing multilayer circuit substrate |
| JPS53108389A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Manufacture for semiconductor device |
| JPS54142981A (en) * | 1978-04-27 | 1979-11-07 | Matsushita Electric Ind Co Ltd | Manufacture of insulation gate type semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS639747B2 (en) | 1988-03-01 |
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