JPS6467937A - Formation of high breakdown strength buried insulating film - Google Patents

Formation of high breakdown strength buried insulating film

Info

Publication number
JPS6467937A
JPS6467937A JP62225027A JP22502787A JPS6467937A JP S6467937 A JPS6467937 A JP S6467937A JP 62225027 A JP62225027 A JP 62225027A JP 22502787 A JP22502787 A JP 22502787A JP S6467937 A JPS6467937 A JP S6467937A
Authority
JP
Japan
Prior art keywords
insulating film
breakdown strength
high breakdown
buried insulating
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62225027A
Other languages
Japanese (ja)
Inventor
Tadashi Nishimura
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62225027A priority Critical patent/JPS6467937A/en
Priority to KR1019880011509A priority patent/KR910009318B1/en
Publication of JPS6467937A publication Critical patent/JPS6467937A/en
Priority to US07/437,778 priority patent/US4948742A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain a high breakdown strength buried insulating film by forming an insulating film having a 2-layer structure of SiO2/Si3N4. CONSTITUTION:Nitrogen ions are implanted into a P-type substrate 1, and a nitrogen ion implanted region 3 is formed in depth of approx. 6000+ or -2000Angstrom from its surface. Then, oxygen ions 5 are implanted, and an oxygen ion implanted region 6 is formed on the region 3 so as not to superpose it. A protective SiO2 layer 7 is laminated on the substrate 1, and annealed. Thus, an insulating film having a 2-layer structure of SiO2(6)/Si3N4(3) is formed to improve its breakdown strength.
JP62225027A 1987-09-08 1987-09-08 Formation of high breakdown strength buried insulating film Pending JPS6467937A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62225027A JPS6467937A (en) 1987-09-08 1987-09-08 Formation of high breakdown strength buried insulating film
KR1019880011509A KR910009318B1 (en) 1987-09-08 1988-09-06 Manufacturing and insulating film forming method of semiconductor device
US07/437,778 US4948742A (en) 1987-09-08 1989-11-20 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225027A JPS6467937A (en) 1987-09-08 1987-09-08 Formation of high breakdown strength buried insulating film

Publications (1)

Publication Number Publication Date
JPS6467937A true JPS6467937A (en) 1989-03-14

Family

ID=16822917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225027A Pending JPS6467937A (en) 1987-09-08 1987-09-08 Formation of high breakdown strength buried insulating film

Country Status (1)

Country Link
JP (1) JPS6467937A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289819A (en) * 2001-03-23 2002-10-04 Nippon Steel Corp Simox substrate
JP2003197882A (en) * 2001-09-12 2003-07-11 Seiko Epson Corp Manufacturing method for semiconductor substrate, the semiconductor substrate, electrooptic device and electronic equipment
KR100398305B1 (en) * 2000-09-01 2003-09-19 미쓰비시덴키 가부시키가이샤 Semiconductor device and soi substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208851A (en) * 1983-05-13 1984-11-27 Hitachi Ltd Semiconductor device and manufacture thereof
JPS62293637A (en) * 1986-06-12 1987-12-21 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208851A (en) * 1983-05-13 1984-11-27 Hitachi Ltd Semiconductor device and manufacture thereof
JPS62293637A (en) * 1986-06-12 1987-12-21 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100398305B1 (en) * 2000-09-01 2003-09-19 미쓰비시덴키 가부시키가이샤 Semiconductor device and soi substrate
JP2002289819A (en) * 2001-03-23 2002-10-04 Nippon Steel Corp Simox substrate
JP2003197882A (en) * 2001-09-12 2003-07-11 Seiko Epson Corp Manufacturing method for semiconductor substrate, the semiconductor substrate, electrooptic device and electronic equipment

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