JPS6482673A - Manufacture of thin film semiconductor element - Google Patents
Manufacture of thin film semiconductor elementInfo
- Publication number
- JPS6482673A JPS6482673A JP24148987A JP24148987A JPS6482673A JP S6482673 A JPS6482673 A JP S6482673A JP 24148987 A JP24148987 A JP 24148987A JP 24148987 A JP24148987 A JP 24148987A JP S6482673 A JPS6482673 A JP S6482673A
- Authority
- JP
- Japan
- Prior art keywords
- ohmic contact
- layer
- contact layer
- laminated
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000005121 nitriding Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To reduce an OFF current generated when holes exceed a potential barrier if a gate electrode is negatively biased by nitriding the surface of a semiconductor layer and then laminating an ohmic contact layer thereon. CONSTITUTION:A glass substrate 1 formed with a gate electrode 2 is mounted on a plasma CVD system, and an insulating film 3 is laminated. Then, a semiconductor layer 4 is laminated on the film 3 in the same CVD system. Thereafter, the surface of the layer 4 is plasma nitrided in the same system. Further, an ohmic contact layer is laminated on a nitrided and carbonized or oxidized layer 4a in the same system. The thus treated substrate 1 is removed from the system, and an ohmic contact layer 5 on a channel is removed by photoetching. The substrate 1 is again mounted in the system, and a protective film 6 is formed. Thus, nitrogen, carbon or oxygen is added to the ohmic contact layer, and its energy band gap is extended.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24148987A JPS6482673A (en) | 1987-09-25 | 1987-09-25 | Manufacture of thin film semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24148987A JPS6482673A (en) | 1987-09-25 | 1987-09-25 | Manufacture of thin film semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6482673A true JPS6482673A (en) | 1989-03-28 |
Family
ID=17075079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24148987A Pending JPS6482673A (en) | 1987-09-25 | 1987-09-25 | Manufacture of thin film semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6482673A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02174170A (en) * | 1988-12-06 | 1990-07-05 | Ind Technol Res Inst | Thin-film transistor and two-layer polysilicon thin-film structure for thin-film resistor |
| WO2009128542A1 (en) * | 2008-04-18 | 2009-10-22 | 株式会社神戸製鋼所 | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
| WO2010001998A1 (en) * | 2008-07-03 | 2010-01-07 | 株式会社神戸製鋼所 | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
-
1987
- 1987-09-25 JP JP24148987A patent/JPS6482673A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02174170A (en) * | 1988-12-06 | 1990-07-05 | Ind Technol Res Inst | Thin-film transistor and two-layer polysilicon thin-film structure for thin-film resistor |
| WO2009128542A1 (en) * | 2008-04-18 | 2009-10-22 | 株式会社神戸製鋼所 | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
| JP2009278057A (en) * | 2008-04-18 | 2009-11-26 | Kobe Steel Ltd | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
| US8299614B2 (en) | 2008-04-18 | 2012-10-30 | Kobe Steel, Ltd. | Interconnection structure, a thin film transistor substrate, and a manufacturing method thereof, as well as a display device |
| TWI413252B (en) * | 2008-04-18 | 2013-10-21 | Kobe Steel Ltd | A wiring structure, a thin film transistor substrate, a method of manufacturing the same, and a display device |
| WO2010001998A1 (en) * | 2008-07-03 | 2010-01-07 | 株式会社神戸製鋼所 | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
| JP2010245495A (en) * | 2008-07-03 | 2010-10-28 | Kobe Steel Ltd | Wiring structure, thin film transistor substrate, method of manufacturing thin film transistor substrate and display |
| US8535997B2 (en) | 2008-07-03 | 2013-09-17 | Kobe Steel, Ltd. | Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device |
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