JPS6484229A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS6484229A
JPS6484229A JP24293987A JP24293987A JPS6484229A JP S6484229 A JPS6484229 A JP S6484229A JP 24293987 A JP24293987 A JP 24293987A JP 24293987 A JP24293987 A JP 24293987A JP S6484229 A JPS6484229 A JP S6484229A
Authority
JP
Japan
Prior art keywords
film
gate electrode
electrode film
insulating film
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24293987A
Inventor
Takehiro Nakamura
Koichi Miyashita
Susumu Sato
Original Assignee
Nippon Soken
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Soken filed Critical Nippon Soken
Priority to JP24293987A priority Critical patent/JPS6484229A/en
Publication of JPS6484229A publication Critical patent/JPS6484229A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE:To surely insulate between a gate electrode film and another electrode film without generating characteristic change by constituting a first insulating film of an oxide film in which metal consisting the gate electrode film is plasma-oxidized. CONSTITUTION:The gate electrode film 1 is formed on a substrate 7, and a source electrode film 2 and a drain electrode film 3 are formed on the gate electrode film 1 via an insulating film. The insulating film is formed in the double structure of the first insulating film 4 which covers the gate electrode film 1 directly and a second insulating film 5 formed on the first insulating film 4. And the first insulating film 4 is constituted of the oxide film by plasma oxidation. In other words, since the plasma oxidation is performed in a vacuum vessel by using an oxygen with high purity, the invasion of impurity in the oxide film can be prevented from being generated. In such a way, it is possible to prevent the characteristic change in a transistor from being generated and to maintain insulation between the gate electrode film 1 and other electrode films 2 and 3 surely by the insulating films 4 and 5 of two, first and second, layers.
JP24293987A 1987-09-28 1987-09-28 Thin film transistor Pending JPS6484229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24293987A JPS6484229A (en) 1987-09-28 1987-09-28 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24293987A JPS6484229A (en) 1987-09-28 1987-09-28 Thin film transistor

Publications (1)

Publication Number Publication Date
JPS6484229A true JPS6484229A (en) 1989-03-29

Family

ID=17096467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24293987A Pending JPS6484229A (en) 1987-09-28 1987-09-28 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS6484229A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2720170A1 (en) * 1994-05-17 1995-11-24 Thomson Lcd Black matrix liquid crystal screen mfr. method with storage capacity
US5637512A (en) * 1990-11-16 1997-06-10 Seiko Epson Corporation Method for fabricating a thin film semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5637512A (en) * 1990-11-16 1997-06-10 Seiko Epson Corporation Method for fabricating a thin film semiconductor device
FR2720170A1 (en) * 1994-05-17 1995-11-24 Thomson Lcd Black matrix liquid crystal screen mfr. method with storage capacity

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