JPS6484229A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6484229A JPS6484229A JP24293987A JP24293987A JPS6484229A JP S6484229 A JPS6484229 A JP S6484229A JP 24293987 A JP24293987 A JP 24293987A JP 24293987 A JP24293987 A JP 24293987A JP S6484229 A JPS6484229 A JP S6484229A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate electrode
- electrode film
- insulating film
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To surely insulate between a gate electrode film and another electrode film without generating characteristic change by constituting a first insulating film of an oxide film in which metal consisting the gate electrode film is plasma-oxidized. CONSTITUTION:The gate electrode film 1 is formed on a substrate 7, and a source electrode film 2 and a drain electrode film 3 are formed on the gate electrode film 1 via an insulating film. The insulating film is formed in the double structure of the first insulating film 4 which covers the gate electrode film 1 directly and a second insulating film 5 formed on the first insulating film 4. And the first insulating film 4 is constituted of the oxide film by plasma oxidation. In other words, since the plasma oxidation is performed in a vacuum vessel by using an oxygen with high purity, the invasion of impurity in the oxide film can be prevented from being generated. In such a way, it is possible to prevent the characteristic change in a transistor from being generated and to maintain insulation between the gate electrode film 1 and other electrode films 2 and 3 surely by the insulating films 4 and 5 of two, first and second, layers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24293987A JPS6484229A (en) | 1987-09-28 | 1987-09-28 | Thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24293987A JPS6484229A (en) | 1987-09-28 | 1987-09-28 | Thin film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6484229A true JPS6484229A (en) | 1989-03-29 |
Family
ID=17096467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24293987A Pending JPS6484229A (en) | 1987-09-28 | 1987-09-28 | Thin film transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6484229A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2720170A1 (en) * | 1994-05-17 | 1995-11-24 | Thomson Lcd | Black matrix liquid crystal screen mfr. method with storage capacity |
US5637512A (en) * | 1990-11-16 | 1997-06-10 | Seiko Epson Corporation | Method for fabricating a thin film semiconductor device |
-
1987
- 1987-09-28 JP JP24293987A patent/JPS6484229A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5637512A (en) * | 1990-11-16 | 1997-06-10 | Seiko Epson Corporation | Method for fabricating a thin film semiconductor device |
FR2720170A1 (en) * | 1994-05-17 | 1995-11-24 | Thomson Lcd | Black matrix liquid crystal screen mfr. method with storage capacity |
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