JPS5726456A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5726456A
JPS5726456A JP9993880A JP9993880A JPS5726456A JP S5726456 A JPS5726456 A JP S5726456A JP 9993880 A JP9993880 A JP 9993880A JP 9993880 A JP9993880 A JP 9993880A JP S5726456 A JPS5726456 A JP S5726456A
Authority
JP
Japan
Prior art keywords
layer
type
film
nitrided
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9993880A
Other languages
Japanese (ja)
Inventor
Kazuo Nojiri
Tatsu Ito
Yuji Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9993880A priority Critical patent/JPS5726456A/en
Publication of JPS5726456A publication Critical patent/JPS5726456A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the reliability of a semiconductor device by selectively removing a nitrided Si film as a protective film on a part readily occuring a characteristic variation, thereby removing the unstability. CONSTITUTION:An n type epitaxial layer on a p type Si substrate 6 is isolated with a p<+> type layer, a p type layer 8 and an n<+> type layer 9 are formed on the layer 7a, a window is opened on an SiO2 film 10, and aluminum electrodes 11 are attached. p Type layers 31, 32 are formed on the layer 7b, and aluminum electrodes 12 are attached. Then, a PSG13 and a plasmic nitrided Si film 14 are laminated by a CVD method, a resist mask is formed, and the film 14 on the layer 8 of Zener diode forming region is opened with a window 15 by freon plasma or the like with a resist mask. The electrode 11 is not exposed. According to this configuration, the Zener diode does not vary the Zener voltage at the operating time.
JP9993880A 1980-07-23 1980-07-23 Semiconductor device Pending JPS5726456A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9993880A JPS5726456A (en) 1980-07-23 1980-07-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9993880A JPS5726456A (en) 1980-07-23 1980-07-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5726456A true JPS5726456A (en) 1982-02-12

Family

ID=14260649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9993880A Pending JPS5726456A (en) 1980-07-23 1980-07-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5726456A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196584A (en) * 1981-05-28 1982-12-02 Fujitsu Ltd Semiconductor device
JPS57208162A (en) * 1981-06-17 1982-12-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
JPS58144019A (en) * 1982-02-23 1983-08-27 Kayaba Ind Co Ltd Forcible pressure feeder of tank for granule body transport truck
JPS60110151A (en) * 1983-11-21 1985-06-15 Nec Corp Semiconductor integrated circuit
JPS60149175A (en) * 1984-01-17 1985-08-06 Nec Ic Microcomput Syst Ltd Semiconductor device
US6387745B1 (en) * 1998-02-06 2002-05-14 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor device having a polydiode element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5537290B2 (en) * 1976-02-16 1980-09-26
JPS5627935A (en) * 1979-08-15 1981-03-18 Toshiba Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5537290B2 (en) * 1976-02-16 1980-09-26
JPS5627935A (en) * 1979-08-15 1981-03-18 Toshiba Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196584A (en) * 1981-05-28 1982-12-02 Fujitsu Ltd Semiconductor device
JPS57208162A (en) * 1981-06-17 1982-12-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
JPS58144019A (en) * 1982-02-23 1983-08-27 Kayaba Ind Co Ltd Forcible pressure feeder of tank for granule body transport truck
JPS60110151A (en) * 1983-11-21 1985-06-15 Nec Corp Semiconductor integrated circuit
JPS60149175A (en) * 1984-01-17 1985-08-06 Nec Ic Microcomput Syst Ltd Semiconductor device
US6387745B1 (en) * 1998-02-06 2002-05-14 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor device having a polydiode element

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