JPS5726456A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5726456A JPS5726456A JP9993880A JP9993880A JPS5726456A JP S5726456 A JPS5726456 A JP S5726456A JP 9993880 A JP9993880 A JP 9993880A JP 9993880 A JP9993880 A JP 9993880A JP S5726456 A JPS5726456 A JP S5726456A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- film
- nitrided
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To improve the reliability of a semiconductor device by selectively removing a nitrided Si film as a protective film on a part readily occuring a characteristic variation, thereby removing the unstability. CONSTITUTION:An n type epitaxial layer on a p type Si substrate 6 is isolated with a p<+> type layer, a p type layer 8 and an n<+> type layer 9 are formed on the layer 7a, a window is opened on an SiO2 film 10, and aluminum electrodes 11 are attached. p Type layers 31, 32 are formed on the layer 7b, and aluminum electrodes 12 are attached. Then, a PSG13 and a plasmic nitrided Si film 14 are laminated by a CVD method, a resist mask is formed, and the film 14 on the layer 8 of Zener diode forming region is opened with a window 15 by freon plasma or the like with a resist mask. The electrode 11 is not exposed. According to this configuration, the Zener diode does not vary the Zener voltage at the operating time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9993880A JPS5726456A (en) | 1980-07-23 | 1980-07-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9993880A JPS5726456A (en) | 1980-07-23 | 1980-07-23 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5726456A true JPS5726456A (en) | 1982-02-12 |
Family
ID=14260649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9993880A Pending JPS5726456A (en) | 1980-07-23 | 1980-07-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5726456A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57196584A (en) * | 1981-05-28 | 1982-12-02 | Fujitsu Ltd | Semiconductor device |
JPS57208162A (en) * | 1981-06-17 | 1982-12-21 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit |
JPS58144019A (en) * | 1982-02-23 | 1983-08-27 | Kayaba Ind Co Ltd | Forcible pressure feeder of tank for granule body transport truck |
JPS60110151A (en) * | 1983-11-21 | 1985-06-15 | Nec Corp | Semiconductor integrated circuit |
JPS60149175A (en) * | 1984-01-17 | 1985-08-06 | Nec Ic Microcomput Syst Ltd | Semiconductor device |
US6387745B1 (en) * | 1998-02-06 | 2002-05-14 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor device having a polydiode element |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5537290B2 (en) * | 1976-02-16 | 1980-09-26 | ||
JPS5627935A (en) * | 1979-08-15 | 1981-03-18 | Toshiba Corp | Semiconductor device |
-
1980
- 1980-07-23 JP JP9993880A patent/JPS5726456A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5537290B2 (en) * | 1976-02-16 | 1980-09-26 | ||
JPS5627935A (en) * | 1979-08-15 | 1981-03-18 | Toshiba Corp | Semiconductor device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57196584A (en) * | 1981-05-28 | 1982-12-02 | Fujitsu Ltd | Semiconductor device |
JPS57208162A (en) * | 1981-06-17 | 1982-12-21 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit |
JPS58144019A (en) * | 1982-02-23 | 1983-08-27 | Kayaba Ind Co Ltd | Forcible pressure feeder of tank for granule body transport truck |
JPS60110151A (en) * | 1983-11-21 | 1985-06-15 | Nec Corp | Semiconductor integrated circuit |
JPS60149175A (en) * | 1984-01-17 | 1985-08-06 | Nec Ic Microcomput Syst Ltd | Semiconductor device |
US6387745B1 (en) * | 1998-02-06 | 2002-05-14 | Mitsubishi Denki Kabushiki Kaisha | Method of making a semiconductor device having a polydiode element |
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