JPS5691464A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5691464A JPS5691464A JP16902979A JP16902979A JPS5691464A JP S5691464 A JPS5691464 A JP S5691464A JP 16902979 A JP16902979 A JP 16902979A JP 16902979 A JP16902979 A JP 16902979A JP S5691464 A JPS5691464 A JP S5691464A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- membrane
- oxide membrane
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
Landscapes
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To obtain a change-over element which can be converted from nonconducted condition to conducted condition by impression of voltage and also easily turned into higher density, by composing it of an amorphous or a noncrystal silicon layer, an insulation membrane formed on this surface and an electrode layer which is formed on this insulation membrane. CONSTITUTION:This is composed of a silicon substrate 1, a silicon dioxide membrane 2, an amorphous silicon layer 3, a silicon oxide membrane 4 which is formed by oxidation of a surface layer of the silicon layer 3, and an electrode 5 consisting of Al formed on the oxide membrane 4. By selecting thickness of the oxide membrane 4 to a required value by taking advantage of the characteristic that an insulation proof stress of a silicon oxide membrane obtained from oxidation of an amorphous silicon is remarkably lower than an insulation proof stress of a single-crystal silicon oxide membrane, and by impressing voltage between the electrode 5 and the silicon layer 3, a dielectric breakdown is caused to the oxide membrane 4 to provide conducted condition between the electrode 5 and the silicon layer 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54169029A JPS5828750B2 (en) | 1979-12-25 | 1979-12-25 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54169029A JPS5828750B2 (en) | 1979-12-25 | 1979-12-25 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5691464A true JPS5691464A (en) | 1981-07-24 |
| JPS5828750B2 JPS5828750B2 (en) | 1983-06-17 |
Family
ID=15878994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54169029A Expired JPS5828750B2 (en) | 1979-12-25 | 1979-12-25 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5828750B2 (en) |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57103348A (en) * | 1980-12-18 | 1982-06-26 | Toshiba Corp | Semiconductor memory device |
| US5079746A (en) * | 1988-02-08 | 1992-01-07 | Fujitsu Limited | Semiconductor memory circuit |
| US6797145B2 (en) * | 1999-08-27 | 2004-09-28 | Lex Kosowsky | Current carrying structure using voltage switchable dielectric material |
| US7695644B2 (en) | 1999-08-27 | 2010-04-13 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
| US7768014B2 (en) | 2005-01-31 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method thereof |
| US7793236B2 (en) | 2007-06-13 | 2010-09-07 | Shocking Technologies, Inc. | System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices |
| US7825491B2 (en) | 2005-11-22 | 2010-11-02 | Shocking Technologies, Inc. | Light-emitting device using voltage switchable dielectric material |
| US7872251B2 (en) | 2006-09-24 | 2011-01-18 | Shocking Technologies, Inc. | Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same |
| US7923844B2 (en) | 2005-11-22 | 2011-04-12 | Shocking Technologies, Inc. | Semiconductor devices including voltage switchable materials for over-voltage protection |
| US7968015B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Light-emitting diode device for voltage switchable dielectric material having high aspect ratio particles |
| JP2011527065A (en) * | 2008-06-30 | 2011-10-20 | アレグロ・マイクロシステムズ・インコーポレーテッド | Nonvolatile and programmable memory cells and memory arrays |
| US8203421B2 (en) | 2008-04-14 | 2012-06-19 | Shocking Technologies, Inc. | Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration |
| US8206614B2 (en) | 2008-01-18 | 2012-06-26 | Shocking Technologies, Inc. | Voltage switchable dielectric material having bonded particle constituents |
| US8272123B2 (en) | 2009-01-27 | 2012-09-25 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
| US8362871B2 (en) | 2008-11-05 | 2013-01-29 | Shocking Technologies, Inc. | Geometric and electric field considerations for including transient protective material in substrate devices |
| US8399773B2 (en) | 2009-01-27 | 2013-03-19 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
| US8968606B2 (en) | 2009-03-26 | 2015-03-03 | Littelfuse, Inc. | Components having voltage switchable dielectric materials |
| US9053844B2 (en) | 2009-09-09 | 2015-06-09 | Littelfuse, Inc. | Geometric configuration or alignment of protective material in a gap structure for electrical devices |
| US9082622B2 (en) | 2010-02-26 | 2015-07-14 | Littelfuse, Inc. | Circuit elements comprising ferroic materials |
| US9208930B2 (en) | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductive core shelled particles |
| US9208931B2 (en) | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductor-on-conductor core shelled particles |
| US9224728B2 (en) | 2010-02-26 | 2015-12-29 | Littelfuse, Inc. | Embedded protection against spurious electrical events |
| US9226391B2 (en) | 2009-01-27 | 2015-12-29 | Littelfuse, Inc. | Substrates having voltage switchable dielectric materials |
| US9320135B2 (en) | 2010-02-26 | 2016-04-19 | Littelfuse, Inc. | Electric discharge protection for surface mounted and embedded components |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4749162B2 (en) * | 2005-01-31 | 2011-08-17 | 株式会社半導体エネルギー研究所 | Semiconductor device |
-
1979
- 1979-12-25 JP JP54169029A patent/JPS5828750B2/en not_active Expired
Cited By (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH049388B2 (en) * | 1980-12-18 | 1992-02-20 | ||
| JPS57103348A (en) * | 1980-12-18 | 1982-06-26 | Toshiba Corp | Semiconductor memory device |
| US5079746A (en) * | 1988-02-08 | 1992-01-07 | Fujitsu Limited | Semiconductor memory circuit |
| US6797145B2 (en) * | 1999-08-27 | 2004-09-28 | Lex Kosowsky | Current carrying structure using voltage switchable dielectric material |
| US7695644B2 (en) | 1999-08-27 | 2010-04-13 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
| US9144151B2 (en) | 1999-08-27 | 2015-09-22 | Littelfuse, Inc. | Current-carrying structures fabricated using voltage switchable dielectric materials |
| US7768014B2 (en) | 2005-01-31 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method thereof |
| US8889490B2 (en) | 2005-01-31 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method thereof |
| US8310064B2 (en) | 2005-11-22 | 2012-11-13 | Shocking Technologies, Inc. | Semiconductor devices including voltage switchable materials for over-voltage protection |
| US7825491B2 (en) | 2005-11-22 | 2010-11-02 | Shocking Technologies, Inc. | Light-emitting device using voltage switchable dielectric material |
| US7923844B2 (en) | 2005-11-22 | 2011-04-12 | Shocking Technologies, Inc. | Semiconductor devices including voltage switchable materials for over-voltage protection |
| US7968014B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
| US7968010B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Method for electroplating a substrate |
| US7981325B2 (en) | 2006-07-29 | 2011-07-19 | Shocking Technologies, Inc. | Electronic device for voltage switchable dielectric material having high aspect ratio particles |
| US7968015B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Light-emitting diode device for voltage switchable dielectric material having high aspect ratio particles |
| US8163595B2 (en) | 2006-09-24 | 2012-04-24 | Shocking Technologies, Inc. | Formulations for voltage switchable dielectric materials having a stepped voltage response and methods for making the same |
| US7872251B2 (en) | 2006-09-24 | 2011-01-18 | Shocking Technologies, Inc. | Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same |
| US7793236B2 (en) | 2007-06-13 | 2010-09-07 | Shocking Technologies, Inc. | System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices |
| US8206614B2 (en) | 2008-01-18 | 2012-06-26 | Shocking Technologies, Inc. | Voltage switchable dielectric material having bonded particle constituents |
| US8203421B2 (en) | 2008-04-14 | 2012-06-19 | Shocking Technologies, Inc. | Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration |
| JP2011527065A (en) * | 2008-06-30 | 2011-10-20 | アレグロ・マイクロシステムズ・インコーポレーテッド | Nonvolatile and programmable memory cells and memory arrays |
| US9208930B2 (en) | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductive core shelled particles |
| US9208931B2 (en) | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductor-on-conductor core shelled particles |
| US8362871B2 (en) | 2008-11-05 | 2013-01-29 | Shocking Technologies, Inc. | Geometric and electric field considerations for including transient protective material in substrate devices |
| US8399773B2 (en) | 2009-01-27 | 2013-03-19 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
| US8272123B2 (en) | 2009-01-27 | 2012-09-25 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
| US9226391B2 (en) | 2009-01-27 | 2015-12-29 | Littelfuse, Inc. | Substrates having voltage switchable dielectric materials |
| US8968606B2 (en) | 2009-03-26 | 2015-03-03 | Littelfuse, Inc. | Components having voltage switchable dielectric materials |
| US9053844B2 (en) | 2009-09-09 | 2015-06-09 | Littelfuse, Inc. | Geometric configuration or alignment of protective material in a gap structure for electrical devices |
| US9082622B2 (en) | 2010-02-26 | 2015-07-14 | Littelfuse, Inc. | Circuit elements comprising ferroic materials |
| US9224728B2 (en) | 2010-02-26 | 2015-12-29 | Littelfuse, Inc. | Embedded protection against spurious electrical events |
| US9320135B2 (en) | 2010-02-26 | 2016-04-19 | Littelfuse, Inc. | Electric discharge protection for surface mounted and embedded components |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5828750B2 (en) | 1983-06-17 |
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