JPS5721862A - Bidirectional thyristor - Google Patents

Bidirectional thyristor

Info

Publication number
JPS5721862A
JPS5721862A JP9606080A JP9606080A JPS5721862A JP S5721862 A JPS5721862 A JP S5721862A JP 9606080 A JP9606080 A JP 9606080A JP 9606080 A JP9606080 A JP 9606080A JP S5721862 A JPS5721862 A JP S5721862A
Authority
JP
Japan
Prior art keywords
electrode
auxiliary
triac
main
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9606080A
Other languages
Japanese (ja)
Inventor
Kohei Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9606080A priority Critical patent/JPS5721862A/en
Publication of JPS5721862A publication Critical patent/JPS5721862A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain high gate sensitivity of a bidirectional tyristor at a high withstand commutation current dv/dt by forming a main TRIAC and an auxiliary TRIAC on the same substrate to individually design the commutation current dv/ dt and gate trigger sensitivity. CONSTITUTION:Main TRIAC A of N1P1N2P2N3(N4) has the first main electrode 1, a gate electrode 2 and the second main electrode 3, and an auxiliary TRIAC B of N5P1N2P2N6(N7) has the first auxiliary electrode 4, a gate electrode and the second auxiliary electrode 5. Conductors 7, 8 are connected to shorticircuit between the gate electrode 2 and the first auxiliary electrode 4, and between the second main electrode 3 and the second auxiliary electrode 5. The main TRIAC A is isolated from the auxiliary TRIAC via a groove 14, and the junction exposure surface is protected by the insulating film 9.
JP9606080A 1980-07-14 1980-07-14 Bidirectional thyristor Pending JPS5721862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9606080A JPS5721862A (en) 1980-07-14 1980-07-14 Bidirectional thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9606080A JPS5721862A (en) 1980-07-14 1980-07-14 Bidirectional thyristor

Publications (1)

Publication Number Publication Date
JPS5721862A true JPS5721862A (en) 1982-02-04

Family

ID=14154889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9606080A Pending JPS5721862A (en) 1980-07-14 1980-07-14 Bidirectional thyristor

Country Status (1)

Country Link
JP (1) JPS5721862A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174265A (en) * 1988-12-27 1990-07-05 Hakusan Seisakusho:Kk Multipolar bidirectional semiconductor control element
EP0791962A1 (en) * 1994-08-26 1997-08-27 Jury Alexeevich Evseev Semiconductor rectifier module
EP1156533A1 (en) * 2000-05-17 2001-11-21 STMicroelectronics S.A. Peripheral structure for a vertical component
US6559515B1 (en) * 1998-09-16 2003-05-06 Stmicroelectronics S.A. Insulating wall between power components
EP4398309A1 (en) * 2022-12-30 2024-07-10 Littelfuse Semiconductor (Wuxi) Co., Ltd. High noise immunity triac structure with insulating trench

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174265A (en) * 1988-12-27 1990-07-05 Hakusan Seisakusho:Kk Multipolar bidirectional semiconductor control element
EP0791962A1 (en) * 1994-08-26 1997-08-27 Jury Alexeevich Evseev Semiconductor rectifier module
EP0791962A4 (en) * 1994-08-26 1999-03-24 Jury Alexeevich Evseev Semiconductor rectifier module
US6559515B1 (en) * 1998-09-16 2003-05-06 Stmicroelectronics S.A. Insulating wall between power components
EP1156533A1 (en) * 2000-05-17 2001-11-21 STMicroelectronics S.A. Peripheral structure for a vertical component
FR2809227A1 (en) * 2000-05-17 2001-11-23 St Microelectronics Sa PERIPHERAL STRUCTURE OF VERTICAL COMPONENT
US6611006B2 (en) 2000-05-17 2003-08-26 Stmicroelectronics S.A. Vertical component peripheral structure
EP4398309A1 (en) * 2022-12-30 2024-07-10 Littelfuse Semiconductor (Wuxi) Co., Ltd. High noise immunity triac structure with insulating trench

Similar Documents

Publication Publication Date Title
JPS5721862A (en) Bidirectional thyristor
JPS5312281A (en) Semiconductor control rectifying element
JPS5316584A (en) Semiconductor control device
JPS5718358A (en) Photodriven type thyristor
JPS5250157A (en) Signal supply system of thyristor-transistor composite connection circ uit
JPS5718360A (en) Gate controlling semiconductor element
JPS5227259A (en) Zero voltage switching circuit
JPS51114069A (en) Semiconductor device
JPS5232660A (en) Semiconductor switch circuit
ES8406816A1 (en) Control circuit for a sensitive semiconductor device of the thyristor or triac type with an impedance for enhancing self-firing.
JPS52120774A (en) Semiconductor device
ES487066A1 (en) High voltage dielectrically isolated solid-state switch
JPS5481073A (en) Sealing method for semiconductor element
JPS5245252A (en) Thyristor gate control circuit
JPS5314581A (en) Thyristor
JPS5713761A (en) Light energized bidirectional thyristor
JPS52127157A (en) Manufacture of semiconductor
JPS5263687A (en) Semiconductor device
JPS51139278A (en) Semi_conductor controlled rectifier device
JPS5435791A (en) Semiconductor pressure sensor
JPS56112752A (en) Semiconductor device
JPS5329647A (en) Solid state relay circuit
JPS5383476A (en) Reverse conducting thyristor
JPS5335361A (en) Gate trigger circuit of thyristor
JPS5353984A (en) Semiconductor device