JPS5481073A - Sealing method for semiconductor element - Google Patents

Sealing method for semiconductor element

Info

Publication number
JPS5481073A
JPS5481073A JP14948277A JP14948277A JPS5481073A JP S5481073 A JPS5481073 A JP S5481073A JP 14948277 A JP14948277 A JP 14948277A JP 14948277 A JP14948277 A JP 14948277A JP S5481073 A JPS5481073 A JP S5481073A
Authority
JP
Japan
Prior art keywords
sealing
substrate
resin
semiconductor element
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14948277A
Other languages
Japanese (ja)
Other versions
JPS57655B2 (en
Inventor
Hisaaki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP14948277A priority Critical patent/JPS5481073A/en
Publication of JPS5481073A publication Critical patent/JPS5481073A/en
Publication of JPS57655B2 publication Critical patent/JPS57655B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To prevent the exfoliation between the sealing resin and the insulator substrate due to the external force by means of the metal mold which forms the T- shape through the aperture part.
CONSTITUTION: Semiconductor element 3 is put on and welded to insulator substrate 1 containing circuit pattern 2 plus more than one unit of aperture part 8, and the electrode of element 3 is connected to pattern 2 via metal thin wire 4. And then the sealing is given using the thermosetting resin as the sealing material for the environmental protection of element 3 as well as the mechanical protection of wire 4. Sealing resin 7 forms T-shape 9 on the back of substrate 1 via part 8, thus preventing the exfoliation of the upper surface of substrate 1 containing pattern 2 and touching resin 7 due to the external force.
COPYRIGHT: (C)1979,JPO&Japio
JP14948277A 1977-12-12 1977-12-12 Sealing method for semiconductor element Granted JPS5481073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14948277A JPS5481073A (en) 1977-12-12 1977-12-12 Sealing method for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14948277A JPS5481073A (en) 1977-12-12 1977-12-12 Sealing method for semiconductor element

Publications (2)

Publication Number Publication Date
JPS5481073A true JPS5481073A (en) 1979-06-28
JPS57655B2 JPS57655B2 (en) 1982-01-07

Family

ID=15476105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14948277A Granted JPS5481073A (en) 1977-12-12 1977-12-12 Sealing method for semiconductor element

Country Status (1)

Country Link
JP (1) JPS5481073A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754356A (en) * 1980-08-05 1982-03-31 Gao Ges Automation Org
JPH03116856A (en) * 1989-09-29 1991-05-17 Hitachi Ltd Semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10649000B2 (en) 2015-12-17 2020-05-12 Panasonic Intellectual Property Management Co., Ltd. Connection assembly
TWI800066B (en) * 2021-11-01 2023-04-21 行政院原子能委員會核能研究所 Composite gel polymer electrolyte lithium battery structure and method of fabricating the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979686A (en) * 1972-12-07 1974-08-01
JPS49114359A (en) * 1973-02-28 1974-10-31
JPS5078170U (en) * 1973-11-19 1975-07-07

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979686A (en) * 1972-12-07 1974-08-01
JPS49114359A (en) * 1973-02-28 1974-10-31
JPS5078170U (en) * 1973-11-19 1975-07-07

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754356A (en) * 1980-08-05 1982-03-31 Gao Ges Automation Org
JPH0158657B2 (en) * 1980-08-05 1989-12-13 Gee Aa Oo G Fuyuuru Automatsuioon Unto Oruganizatsuioon Mbh
JPH05270183A (en) * 1980-08-05 1993-10-19 Gao Ges Autom Org Mbh Carrier element for ic module
JPH03116856A (en) * 1989-09-29 1991-05-17 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS57655B2 (en) 1982-01-07

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